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5961-00-175-6977
20 Products
325129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001756977
NSN
5961-00-175-6977
MFG
TELEMECHANICS INC
Description
DESIGN CONTROL REFERENCE: 325129
MANUFACTURERS CODE: 57712
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
44521-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001754507
NSN
5961-00-175-4507
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 50.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
44521-019M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001754507
NSN
5961-00-175-4507
44521-019M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001754507
NSN
5961-00-175-4507
MFG
AEROFLEX WICHITA INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 50.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
1855-0086
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001754761
NSN
5961-00-175-4761
1855-0086
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001754761
NSN
5961-00-175-4761
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
DN619
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001754761
NSN
5961-00-175-4761
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
FD1216
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001754761
NSN
5961-00-175-4761
FD1216
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001754761
NSN
5961-00-175-4761
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
8150000414-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001754921
NSN
5961-00-175-4921
8150000414-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001754921
NSN
5961-00-175-4921
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.380 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 1.573 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 1.050 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL T
Related Searches:
JANTX2N3716
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001754921
NSN
5961-00-175-4921
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.380 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 1.573 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 1.050 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL T
Related Searches:
2N914
TRANSISTOR
NSN, MFG P/N
5961001756971
NSN
5961-00-175-6971
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
325079
TRANSISTOR
NSN, MFG P/N
5961001756971
NSN
5961-00-175-6971
MFG
TELEMECHANICS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
EN914
TRANSISTOR
NSN, MFG P/N
5961001756971
NSN
5961-00-175-6971
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
325081
TRANSISTOR
NSN, MFG P/N
5961001756972
NSN
5961-00-175-6972
MFG
TELEMECHANICS INC
Description
DESIGN CONTROL REFERENCE: 325081
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 57712
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
FS24363
TRANSISTOR
NSN, MFG P/N
5961001756972
NSN
5961-00-175-6972
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 325081
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 57712
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N2218
TRANSISTOR
NSN, MFG P/N
5961001756973
NSN
5961-00-175-6973
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN
Related Searches:
325083
TRANSISTOR
NSN, MFG P/N
5961001756973
NSN
5961-00-175-6973
MFG
TELEMECHANICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN
Related Searches:
325085
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001756975
NSN
5961-00-175-6975
325085
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001756975
NSN
5961-00-175-6975
MFG
TELEMECHANICS INC
Description
DESIGN CONTROL REFERENCE: 325085
MANUFACTURERS CODE: 57712
OVERALL DIAMETER: 0.366 INCHES NOMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
40655
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001756975
NSN
5961-00-175-6975
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 325085
MANUFACTURERS CODE: 57712
OVERALL DIAMETER: 0.366 INCHES NOMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
0152
TRANSISTOR
NSN, MFG P/N
5961001756976
NSN
5961-00-175-6976
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
DESIGN CONTROL REFERENCE: 325101
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 57712
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
325101
TRANSISTOR
NSN, MFG P/N
5961001756976
NSN
5961-00-175-6976
MFG
TELEMECHANICS INC
Description
DESIGN CONTROL REFERENCE: 325101
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 57712
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SL88
TRANSISTOR
NSN, MFG P/N
5961001756976
NSN
5961-00-175-6976
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 325101
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 57712
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
