My Quote Request
No products added yet
5980-01-105-5059
20 Products
E000139
SWITCH,OPTOELECTRONIC
NSN, MFG P/N
5980011055059
NSN
5980-01-105-5059
MFG
FEDERAL EQUIPMENT COMPANY USE CAGE CODE 60587 FOR CATALOGING.
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: INFARED TYPE; MOLDED LEXAN CASE; 2-1/8 IN. LG; 1-7/8 IN. W; 1 IN. H
SPECIAL FEATURES: EXPLOSION PROOF; WATER PROOF
Related Searches:
HLMP-0380
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011041672
NSN
5980-01-104-1672
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
III END ITEM IDENTIFICATION: B52 ACFT
Related Searches:
PL520D01000001 ITEM 129
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011041672
NSN
5980-01-104-1672
PL520D01000001 ITEM 129
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011041672
NSN
5980-01-104-1672
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
III END ITEM IDENTIFICATION: B52 ACFT
Related Searches:
PL520D01000001/129
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011041672
NSN
5980-01-104-1672
PL520D01000001/129
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011041672
NSN
5980-01-104-1672
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
III END ITEM IDENTIFICATION: B52 ACFT
Related Searches:
012997SA-2
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011042325
NSN
5980-01-104-2325
MFG
ARGON ST INC .
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM FORWARD CURRENT, DC
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 0.6 MILLICANDELA NOMINAL
OVERALL DIAMETER: 0.077 INCHES MINIMUM AND 0.087 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE OR GALLIUM PHOSPHIDE
Related Searches:
04610047-002
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011042325
NSN
5980-01-104-2325
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM FORWARD CURRENT, DC
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 0.6 MILLICANDELA NOMINAL
OVERALL DIAMETER: 0.077 INCHES MINIMUM AND 0.087 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE OR GALLIUM PHOSPHIDE
Related Searches:
5352T1-5VLC
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011042325
NSN
5980-01-104-2325
MFG
INDUSTRIAL DEVICES INC
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM FORWARD CURRENT, DC
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 0.6 MILLICANDELA NOMINAL
OVERALL DIAMETER: 0.077 INCHES MINIMUM AND 0.087 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE OR GALLIUM PHOSPHIDE
Related Searches:
HLMP6620
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011042325
NSN
5980-01-104-2325
MFG
HEWLETT PACKARD CO
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM FORWARD CURRENT, DC
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 0.6 MILLICANDELA NOMINAL
OVERALL DIAMETER: 0.077 INCHES MINIMUM AND 0.087 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE OR GALLIUM PHOSPHIDE
Related Searches:
004375
HOLDER,PHOTOELECTRIC CELL
NSN, MFG P/N
5980011042366
NSN
5980-01-104-2366
MFG
MOOG INC.
Description
MATERIAL: BRASS
SHOCK MOUNT: NOT PROVIDED
Related Searches:
100078-003
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011043859
NSN
5980-01-104-3859
MFG
TYMSHARE INC COMPUTER SUPPORT SERVICES DIV OF MCDONNELL DOUGLAS CORP
Description
LIGHT EMITTING DIODE
Related Searches:
AF2914287
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011044488
NSN
5980-01-104-4488
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES NOMINAL REVERSE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: TIL268
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 500.0 MICROCANDELA NOMINAL
MANUFACTURERS CODE: 01295
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.3 NOMINAL REVERSE VOLTAGE, AVERAGE
Related Searches:
TIL268
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011044488
NSN
5980-01-104-4488
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES NOMINAL REVERSE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: TIL268
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 500.0 MICROCANDELA NOMINAL
MANUFACTURERS CODE: 01295
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.3 NOMINAL REVERSE VOLTAGE, AVERAGE
Related Searches:
21L248
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980011045142
NSN
5980-01-104-5142
MFG
EG AND G VACTEC INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 0.275 IN. LG; TERMINALS ARE A MINIMUM OF 1.000 IN. LG; 0.370 IN. O/A LG; CELL VOLTAGE AT 70 VOLTS; ISOLATION VOLTAGE AT 500 VOLTS; FORWARD VOLTAGE AT 40 MILLIAMPS IS 2 VOLTS; REVERSE VOLTAGE IS 3 VOLTS; OPERATING CASE TEMPERATURE SHALL BE MINUS 55 TO PLUS
~1: 70 DEGREES CELCIUS
Related Searches:
40-005111-01
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980011045142
NSN
5980-01-104-5142
MFG
INTERLINK COMMUNICATIONS INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 0.275 IN. LG; TERMINALS ARE A MINIMUM OF 1.000 IN. LG; 0.370 IN. O/A LG; CELL VOLTAGE AT 70 VOLTS; ISOLATION VOLTAGE AT 500 VOLTS; FORWARD VOLTAGE AT 40 MILLIAMPS IS 2 VOLTS; REVERSE VOLTAGE IS 3 VOLTS; OPERATING CASE TEMPERATURE SHALL BE MINUS 55 TO PLUS
~1: 70 DEGREES CELCIUS
Related Searches:
012-228
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011045837
NSN
5980-01-104-5837
MFG
AMPEX SYSTEMS CORP
Description
LIGHT EMITTING DIODE
Related Searches:
OPB706
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980011046401
NSN
5980-01-104-6401
MFG
OPTRON CORP
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: A GALLIUM INFRARED LED AND A SILICON N-P-N PHOTOTRANSISTOR MTD IN A PLASTIC PKG; COLLECTOR-EMITTER VOLTAGE 30 V; EMITTER-COLLECTOR VOLTAGE 5 V; COLLECTOR DC CURRENT 25 MA; 75 MW POWER DISSIPATION; 0.240 IN. LG; 0.190 IN. W; 0.170 IN. H; 4 PIN TYPE
~1: TERMINALS
Related Searches:
OPB706C
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980011046401
NSN
5980-01-104-6401
MFG
OPTEK TECHNOLOGY INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: A GALLIUM INFRARED LED AND A SILICON N-P-N PHOTOTRANSISTOR MTD IN A PLASTIC PKG; COLLECTOR-EMITTER VOLTAGE 30 V; EMITTER-COLLECTOR VOLTAGE 5 V; COLLECTOR DC CURRENT 25 MA; 75 MW POWER DISSIPATION; 0.240 IN. LG; 0.190 IN. W; 0.170 IN. H; 4 PIN TYPE
~1: TERMINALS
Related Searches:
1750R03MMM
DISPLAY,OPTOELECTRONIC
NSN, MFG P/N
5980011053374
NSN
5980-01-105-3374
MFG
INDUSTRIAL ELECTRONIC ENGINEERS INC. DBA IEE
Description
CHARACTER QUANTITY PER LINE: 1
DISPLAY COLOR: RED
DISPLAY TYPE: LIGHT EMITTING DIODE
LINE QUANTITY: 1
OVERALL LENGTH: 1.093 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
Related Searches:
CM4-8027
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011053375
NSN
5980-01-105-3375
MFG
CHICAGO MINIATURE LIGHTING LLC DBA CHICAGO MINIATURE OPTOELECTRON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.680 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SM-B-783479
LIGHT EMITTING DIODE
NSN, MFG P/N
5980011053375
NSN
5980-01-105-3375
MFG
DEPARTMENT OF THE ARMY HQ U S ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.680 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, DC
