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5980-00-251-3904
20 Products
PS1138
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002513904
NSN
5980-00-251-3904
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
RESPONSE TIME: 0.9 MICROSECONDS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
01852-4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5980002251541
NSN
5980-00-225-1541
01852-4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5980002251541
NSN
5980-00-225-1541
MFG
L-3 COMMUNICATIONS ELECTRONIC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
01860
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5980002251542
NSN
5980-00-225-1542
MFG
L-3 COMMUNICATIONS ELECTRONIC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
363188
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002252409
NSN
5980-00-225-2409
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
353-2699-010
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002327331
NSN
5980-00-232-7331
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.054 INCHES MINIMUM AND 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.122 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
62000-002
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002327331
NSN
5980-00-232-7331
MFG
MICROPAC INDUSTRIES INC.
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.054 INCHES MINIMUM AND 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.122 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
62005-002
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002327331
NSN
5980-00-232-7331
MFG
MICROPAC INDUSTRIES INC.
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.054 INCHES MINIMUM AND 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.122 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
Q531755012
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002327331
NSN
5980-00-232-7331
MFG
RHEINMETALL AIR DEFENCE AG
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.054 INCHES MINIMUM AND 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.122 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
TIL23
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002327331
NSN
5980-00-232-7331
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.054 INCHES MINIMUM AND 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.122 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
H011
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002407384
NSN
5980-00-240-7384
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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H11
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002407384
NSN
5980-00-240-7384
MFG
KONGSBERG DEFENCE & AEROSPACE AS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
LS602
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002413925
NSN
5980-00-241-3925
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
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T1L601
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002413925
NSN
5980-00-241-3925
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
129-161
PHOTOELECTRIC CELL
NSN, MFG P/N
5980002433657
NSN
5980-00-243-3657
MFG
THEON SENSORS SA
Description
PHOTOELECTRIC CELL
Related Searches:
15011000
PHOTOELECTRIC CELL
NSN, MFG P/N
5980002433657
NSN
5980-00-243-3657
MFG
BAE SYSTEMS AUSTRALIA LAND DIVISION
Description
PHOTOELECTRIC CELL
Related Searches:
CL905L
PHOTOELECTRIC CELL
NSN, MFG P/N
5980002433657
NSN
5980-00-243-3657
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
PHOTOELECTRIC CELL
Related Searches:
SM-C-771275
PHOTOELECTRIC CELL
NSN, MFG P/N
5980002433657
NSN
5980-00-243-3657
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
PHOTOELECTRIC CELL
Related Searches:
LSM3
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002504722
NSN
5980-00-250-4722
MFG
OPCOA DIV OF IDS
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
OSL-3
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002504722
NSN
5980-00-250-4722
MFG
OPCOA DIV OF IDS
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
618970-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002513904
NSN
5980-00-251-3904
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
RESPONSE TIME: 0.9 MICROSECONDS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
