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5962-01-506-7249
20 Products
IDT74FCT162373ETPV
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067249
NSN
5962-01-506-7249
IDT74FCT162373ETPV
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067249
NSN
5962-01-506-7249
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 LATCH
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: F-16C/D TEST STATION 4920014959100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 48 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
6012249-002
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067257
NSN
5962-01-506-7257
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: F-16C/DTEST STATION 4920014959100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 48 PIN
Related Searches:
IDT74FCT16245ETPV
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067257
NSN
5962-01-506-7257
IDT74FCT16245ETPV
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067257
NSN
5962-01-506-7257
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: F-16C/DTEST STATION 4920014959100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 48 PIN
Related Searches:
932750-4B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932883-205
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC5194-205
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DH75703-205
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
GEM31421BZC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
SARNOFF CORPORATION
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067265
NSN
5962-01-506-7265
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: USED INF-15 AN/APG-63 RADAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY CAPACITY: MEMORY 1024 WORD X 4 BIT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-0050701QEB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067386
NSN
5962-01-506-7386
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-0050701QEB
III END ITEM IDENTIFICATION: TORNADO
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 67268
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: BIPOLAR METAL-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, BIPOLAR, TTL/DTL COMPATIBLE, PROGRAMMABLE TIMER/COUNTER, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 LEADLESS
Related Searches:
D77T0037-17C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067489
NSN
5962-01-506-7489
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
III END ITEM IDENTIFICATION: USED IN F-15 AN/ASQ-195 DATA CONVERTER
MEMORY DEVICE TYPE: EPROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL-CMOS, LOGIC DEVICE PROGRAMMMABLE, UV ERASABLE
SPECIAL FEATURES: USE PROGRAM FILE NAME D77T0037.17C/ PROGRAM PART NUMBER 929-423016-1
Related Searches:
EP310
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067489
NSN
5962-01-506-7489
MFG
ALTERA CORPORATION
Description
III END ITEM IDENTIFICATION: USED IN F-15 AN/ASQ-195 DATA CONVERTER
MEMORY DEVICE TYPE: EPROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL-CMOS, LOGIC DEVICE PROGRAMMMABLE, UV ERASABLE
SPECIAL FEATURES: USE PROGRAM FILE NAME D77T0037.17C/ PROGRAM PART NUMBER 929-423016-1
Related Searches:
GEM22534BRA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067489
NSN
5962-01-506-7489
MFG
SARNOFF CORPORATION
Description
III END ITEM IDENTIFICATION: USED IN F-15 AN/ASQ-195 DATA CONVERTER
MEMORY DEVICE TYPE: EPROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL-CMOS, LOGIC DEVICE PROGRAMMMABLE, UV ERASABLE
SPECIAL FEATURES: USE PROGRAM FILE NAME D77T0037.17C/ PROGRAM PART NUMBER 929-423016-1
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015067489
NSN
5962-01-506-7489
MFG
DLA LAND AND MARITIME
Description
III END ITEM IDENTIFICATION: USED IN F-15 AN/ASQ-195 DATA CONVERTER
MEMORY DEVICE TYPE: EPROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL-CMOS, LOGIC DEVICE PROGRAMMMABLE, UV ERASABLE
SPECIAL FEATURES: USE PROGRAM FILE NAME D77T0037.17C/ PROGRAM PART NUMBER 929-423016-1
Related Searches:
6012264-001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962015067533
NSN
5962-01-506-7533
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.000 INCHES NOMINAL
BODY WIDTH: 1.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC
FEATURES PROVIDED: HERMETICALLY SEALED AND W/SHORT CIRCUIT PROTECTION
III END ITEM IDENTIFICATION: F-16C/DTEST STATION4920014959100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -40.0 TO 70.0 DEG CELSIUS
Related Searches:
UNR2-5-2D5
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962015067533
NSN
5962-01-506-7533
MFG
MURATA POWER SOLUTIONS INC.
Description
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.000 INCHES NOMINAL
BODY WIDTH: 1.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC
FEATURES PROVIDED: HERMETICALLY SEALED AND W/SHORT CIRCUIT PROTECTION
III END ITEM IDENTIFICATION: F-16C/DTEST STATION4920014959100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -40.0 TO 70.0 DEG CELSIUS
Related Searches:
844498-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067534
NSN
5962-01-506-7534
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
III END ITEM IDENTIFICATION: OH-58D KIOWA WARRIOR (KW) UNIQUE AVIONICS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: QUARDRUPLE 2-INPUT POSITIVE GATES
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
Related Searches:
SN74ACT00D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067534
NSN
5962-01-506-7534
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
III END ITEM IDENTIFICATION: OH-58D KIOWA WARRIOR (KW) UNIQUE AVIONICS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: QUARDRUPLE 2-INPUT POSITIVE GATES
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
Related Searches:
844517-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015067561
NSN
5962-01-506-7561
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.413 INCHES NOMINAL
BODY LENGTH: 0.413 INCHES NOMINAL
BODY WIDTH: 0.299 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
III END ITEM IDENTIFICATION: OH-58D KIOWA WARRIOR (KW) UNIQUE AVIONICS
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROPROCESSOR SUPERVISORY CIRCUITS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
