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5962-01-497-6805
20 Products
6N593ITEM4
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014976805
NSN
5962-01-497-6805
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZW
DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
MANUFACTURERS CODE: 67268
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8688701CA
SPEC/STD CONTROLLING DATA:
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D0011535-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976808
NSN
5962-01-497-6808
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
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ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976808
NSN
5962-01-497-6808
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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D0011536-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976815
NSN
5962-01-497-6815
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
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ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976815
NSN
5962-01-497-6815
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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D0011537-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976818
NSN
5962-01-497-6818
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976818
NSN
5962-01-497-6818
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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D0011538-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976822
NSN
5962-01-497-6822
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
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ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976822
NSN
5962-01-497-6822
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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D0011539-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976824
NSN
5962-01-497-6824
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976824
NSN
5962-01-497-6824
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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D0011540-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976826
NSN
5962-01-497-6826
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976826
NSN
5962-01-497-6826
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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D0011541-1001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976827
NSN
5962-01-497-6827
MFG
BOEING COMPANY THE DBA BOEING
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976827
NSN
5962-01-497-6827
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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AM27C010-90DC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014976993
NSN
5962-01-497-6993
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) WORD QUANTITY: 128000
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 32 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MD28F020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014977033
NSN
5962-01-497-7033
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ERASABLE AND HIGH PERFORMANCE AND LOW POWER AND PROGRAMMABLE
III END ITEM IDENTIFICATION: 2350-01-455-3174/STRIKER, XM707
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 5VOLT, BYTE ALTERABLE E2PROM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
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MD28F020-12
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014977033
NSN
5962-01-497-7033
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ERASABLE AND HIGH PERFORMANCE AND LOW POWER AND PROGRAMMABLE
III END ITEM IDENTIFICATION: 2350-01-455-3174/STRIKER, XM707
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 5VOLT, BYTE ALTERABLE E2PROM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
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IDT54FCT163ATDB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014977193
NSN
5962-01-497-7193
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: SYNCHRONOUS PRESETTABLE BINARY COUNTER
TERMINAL TYPE AND QUANTITY: 16 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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51391-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014977303
NSN
5962-01-497-7303
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
III END ITEM IDENTIFICATION: RSRP RADAR SYSTEM
MEMORY DEVICE TYPE: ROM
