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5962-01-437-5184

20 Products

PL229-057345-01/67

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375184

NSN

5962-01-437-5184

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PL229-057345-01/67

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375184

NSN

5962-01-437-5184

MFG

BAE SYSTEMS OPERATIONS LTD

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.310 INCHES NOMINAL
BODY LENGTH: 1.060 INCHES NOMINAL
BODY WIDTH: 0.200 INCHES NOMINAL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8974001R
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-89740
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUS TRANSCEIVER, THREE-STATE, TTL COMPATIBLE, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

9482-00162

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375184

NSN

5962-01-437-5184

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9482-00162

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375184

NSN

5962-01-437-5184

MFG

BAE SYSTEMS OPERATIONS LTD

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.310 INCHES NOMINAL
BODY LENGTH: 1.060 INCHES NOMINAL
BODY WIDTH: 0.200 INCHES NOMINAL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8974001R
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-89740
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUS TRANSCEIVER, THREE-STATE, TTL COMPATIBLE, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

PL229-057345-01 ITEM 67

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375184

NSN

5962-01-437-5184

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PL229-057345-01 ITEM 67

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375184

NSN

5962-01-437-5184

MFG

BAE SYSTEMS OPERATIONS LTD

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.310 INCHES NOMINAL
BODY LENGTH: 1.060 INCHES NOMINAL
BODY WIDTH: 0.200 INCHES NOMINAL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8974001R
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-89740
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUS TRANSCEIVER, THREE-STATE, TTL COMPATIBLE, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

319R670H01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014375221

NSN

5962-01-437-5221

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319R670H01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014375221

NSN

5962-01-437-5221

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: B-1B
SPECIAL FEATURES: ALTERED ITEM MADE FROM PN 581R504H32

5165223-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014375358

NSN

5962-01-437-5358

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5165223-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014375358

NSN

5962-01-437-5358

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
III END ITEM IDENTIFICATION: 13A6560-7 F-15
SPECIAL FEATURES: RESCREENED ITEM BY (8W164) OR (7H140)

LM107J8/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014375358

NSN

5962-01-437-5358

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LM107J8/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014375358

NSN

5962-01-437-5358

MFG

LINEAR TECHNOLOGY CORPORATION DBA LINEAR TECHNOLOGY

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
III END ITEM IDENTIFICATION: 13A6560-7 F-15
SPECIAL FEATURES: RESCREENED ITEM BY (8W164) OR (7H140)

HV5222PJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375380

NSN

5962-01-437-5380

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HV5222PJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375380

NSN

5962-01-437-5380

MFG

SUPERTEX INC.

Description

DESIGN FUNCTION AND QUANTITY: 2 CONVERTER, SERIAL TO PARALLEL
III END ITEM IDENTIFICATION: 6625-01-412-6479

HV5308PJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375387

NSN

5962-01-437-5387

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HV5308PJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375387

NSN

5962-01-437-5387

MFG

SUPERTEX INC.

Description

DESIGN FUNCTION AND QUANTITY: 2 CONVERTER, SERIAL TO PARALLEL
III END ITEM IDENTIFICATION: 6625-01-412-6479

HV5408PJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375391

NSN

5962-01-437-5391

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HV5408PJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014375391

NSN

5962-01-437-5391

MFG

SUPERTEX INC.

Description

DESIGN FUNCTION AND QUANTITY: 2 CONVERTER, SERIAL TO PARALLEL
III END ITEM IDENTIFICATION: 6625-01-412-6479

SNJ54AS808AJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014376055

NSN

5962-01-437-6055

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SNJ54AS808AJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014376055

NSN

5962-01-437-6055

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

III END ITEM IDENTIFICATION: RADAR SEVEN REGION AND PORTUGAL RADAR EQUIPMENT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

2698699-1002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377524

NSN

5962-01-437-7524

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2698699-1002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377524

NSN

5962-01-437-7524

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8862402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT

3183051-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377524

NSN

5962-01-437-7524

View More Info

3183051-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377524

NSN

5962-01-437-7524

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8862402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377524

NSN

5962-01-437-7524

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377524

NSN

5962-01-437-7524

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8862402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT

3119515-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377542

NSN

5962-01-437-7542

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3119515-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377542

NSN

5962-01-437-7542

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A/F-18-DCN

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377542

NSN

5962-01-437-7542

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377542

NSN

5962-01-437-7542

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A/F-18-DCN

2699594-1002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

View More Info

2699594-1002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: A/F-18-DCN
SPECIAL FEATURES: ALTERED BY FORMING COMPONENT LEADS

3183053-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

View More Info

3183053-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: A/F-18-DCN
SPECIAL FEATURES: ALTERED BY FORMING COMPONENT LEADS

5962-9230502MYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

View More Info

5962-9230502MYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: A/F-18-DCN
SPECIAL FEATURES: ALTERED BY FORMING COMPONENT LEADS

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377548

NSN

5962-01-437-7548

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: A/F-18-DCN
SPECIAL FEATURES: ALTERED BY FORMING COMPONENT LEADS

2698727-1017

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377549

NSN

5962-01-437-7549

View More Info

2698727-1017

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014377549

NSN

5962-01-437-7549

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: A/F-18-DCN