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5962-01-411-9875

20 Products

123955-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014119875

NSN

5962-01-411-9875

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123955-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014119875

NSN

5962-01-411-9875

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY

147584-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014119453

NSN

5962-01-411-9453

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147584-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014119453

NSN

5962-01-411-9453

MFG

HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: B-1B
SPECIAL FEATURES: ESD

A3014819-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119556

NSN

5962-01-411-9556

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A3014819-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119556

NSN

5962-01-411-9556

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS ULTRAVIOLET ERASABLE PROGRAMMABLE LOGIC DEVICE
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 68 PIN
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

EP1800IGM883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119556

NSN

5962-01-411-9556

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EP1800IGM883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119556

NSN

5962-01-411-9556

MFG

ALTERA CORPORATION

Description

III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS ULTRAVIOLET ERASABLE PROGRAMMABLE LOGIC DEVICE
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 68 PIN
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119556

NSN

5962-01-411-9556

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119556

NSN

5962-01-411-9556

MFG

DLA LAND AND MARITIME

Description

III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS ULTRAVIOLET ERASABLE PROGRAMMABLE LOGIC DEVICE
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 68 PIN
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

2817388-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119560

NSN

5962-01-411-9560

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2817388-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119560

NSN

5962-01-411-9560

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119560

NSN

5962-01-411-9560

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119560

NSN

5962-01-411-9560

MFG

DLA LAND AND MARITIME

2691776-13

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

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2691776-13

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

MFG

RAYTHEON COMPANY

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS, PROGRAMMABLE ARRAY LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AT22V10-15DM/883C

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

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AT22V10-15DM/883C

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

MFG

ATMEL CORPORATION

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS, PROGRAMMABLE ARRAY LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PALC22V10B-15WC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

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PALC22V10B-15WC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS, PROGRAMMABLE ARRAY LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PALC22V10B-15WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

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PALC22V10B-15WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS, PROGRAMMABLE ARRAY LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119572

NSN

5962-01-411-9572

MFG

DLA LAND AND MARITIME

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: CMOS, PROGRAMMABLE ARRAY LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

330737-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

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330737-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNPROGRAMMED ULTRAVIOLET EPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CY7C293A-50DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

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CY7C293A-50DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNPROGRAMMED ULTRAVIOLET EPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CY7C293A-50WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

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CY7C293A-50WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNPROGRAMMED ULTRAVIOLET EPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119574

NSN

5962-01-411-9574

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNPROGRAMMED ULTRAVIOLET EPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

330737-002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119576

NSN

5962-01-411-9576

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330737-002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119576

NSN

5962-01-411-9576

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: EPROM WITH WINDOW
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CY7C293A-30WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119576

NSN

5962-01-411-9576

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CY7C293A-30WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119576

NSN

5962-01-411-9576

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: EPROM WITH WINDOW
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119576

NSN

5962-01-411-9576

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014119576

NSN

5962-01-411-9576

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: EPROM WITH WINDOW
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

10957P-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014119648

NSN

5962-01-411-9648

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10957P-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014119648

NSN

5962-01-411-9648

MFG

ROCKWELL INTL CORP TELECOMMUNICATIONS DIV