Featured Products

My Quote Request

No products added yet

5962-01-387-9970

20 Products

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879970

NSN

5962-01-387-9970

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879970

NSN

5962-01-387-9970

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEPARTURE FROM CITED DESIGNATOR: PROGRAMMED PER:PRG553942-200
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND SCHOTTKY AND TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: NEXT ASSY:G526515 USED ON:COBRA DANE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 256-BIT FUSED PROM
SPECIFICATION/STANDARD DATA: 81349-M38510/20702BEA GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED

ROM/PROM FAMILY 204

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879475

NSN

5962-01-387-9475

View More Info

ROM/PROM FAMILY 204

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879475

NSN

5962-01-387-9475

MFG

DLA LAND AND MARITIME

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

M38510/32201BFX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879577

NSN

5962-01-387-9577

View More Info

M38510/32201BFX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879577

NSN

5962-01-387-9577

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/32201BFX
DESIGN FUNCTION AND QUANTITY: 3 DRIVER, BUS
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 81349
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 16 LEADLESS

AR196-18

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013879578

NSN

5962-01-387-9578

View More Info

AR196-18

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013879578

NSN

5962-01-387-9578

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

C9090

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879588

NSN

5962-01-387-9588

View More Info

C9090

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879588

NSN

5962-01-387-9588

MFG

HOWELL INSTRUMENTS INC .

C8160

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879598

NSN

5962-01-387-9598

View More Info

C8160

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879598

NSN

5962-01-387-9598

MFG

HOWELL INSTRUMENTS INC .

H101-104

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879610

NSN

5962-01-387-9610

View More Info

H101-104

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879610

NSN

5962-01-387-9610

MFG

HOWELL INSTRUMENTS INC .

AR196-17

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013879612

NSN

5962-01-387-9612

View More Info

AR196-17

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013879612

NSN

5962-01-387-9612

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

AR196-16

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013879636

NSN

5962-01-387-9636

View More Info

AR196-16

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013879636

NSN

5962-01-387-9636

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

C9295

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879648

NSN

5962-01-387-9648

View More Info

C9295

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013879648

NSN

5962-01-387-9648

MFG

HOWELL INSTRUMENTS INC .

5962-8984103LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

View More Info

5962-8984103LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

NHPL7145435-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

View More Info

NHPL7145435-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

MFG

DLA LAND AND MARITIME

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

PL7145435-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

View More Info

PL7145435-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

ROM/PROM FAMILY 204

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

View More Info

ROM/PROM FAMILY 204

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879765

NSN

5962-01-387-9765

MFG

DLA LAND AND MARITIME

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

5962-8984103LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

View More Info

5962-8984103LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

NHPL7145436-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

View More Info

NHPL7145436-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

MFG

DLA LAND AND MARITIME

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

PL7145436-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

View More Info

PL7145436-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

ROM/PROM FAMILY 204

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

View More Info

ROM/PROM FAMILY 204

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879766

NSN

5962-01-387-9766

MFG

DLA LAND AND MARITIME

Description

MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED

G553942-200

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879970

NSN

5962-01-387-9970

View More Info

G553942-200

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879970

NSN

5962-01-387-9970

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 256
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEPARTURE FROM CITED DESIGNATOR: PROGRAMMED PER:PRG553942-200
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND SCHOTTKY AND TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: NEXT ASSY:G526515 USED ON:COBRA DANE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 256-BIT FUSED PROM
SPECIFICATION/STANDARD DATA: 81349-M38510/20702BEA GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED

M38510/20702BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879970

NSN

5962-01-387-9970

View More Info

M38510/20702BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013879970

NSN

5962-01-387-9970

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 256
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEPARTURE FROM CITED DESIGNATOR: PROGRAMMED PER:PRG553942-200
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND SCHOTTKY AND TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: NEXT ASSY:G526515 USED ON:COBRA DANE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 256-BIT FUSED PROM
SPECIFICATION/STANDARD DATA: 81349-M38510/20702BEA GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED