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5962-01-379-9744
20 Products
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799744
NSN
5962-01-379-9744
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
1333314G1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799745
NSN
5962-01-379-9745
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
MICROCIRCUIT,MEMORY
Related Searches:
5962-8867004LA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799745
NSN
5962-01-379-9745
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799745
NSN
5962-01-379-9745
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
5962-3834603BRA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799780
NSN
5962-01-379-9780
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/34603BRA
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 336.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/346
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/346 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
Related Searches:
M38510/34603BRA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799780
NSN
5962-01-379-9780
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/34603BRA
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 336.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/346
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/346 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
Related Searches:
M38510/34603BRB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799780
NSN
5962-01-379-9780
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/34603BRA
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 336.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/346
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/346 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
Related Searches:
M38510/34603BRX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799780
NSN
5962-01-379-9780
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/34603BRA
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 336.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/346
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/346 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
Related Searches:
A584A427-101
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799823
NSN
5962-01-379-9823
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.758 INCHES MAXIMUM
BODY WIDTH: 0.758 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM INPUT
DESIGN FUNCTION AND QUANTITY: 1 PROCESSOR, INPUT/OUTPUT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 55 INPUT AND 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 1430.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DECODER/EXECUTION PROCESSOR
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 100 BEAM LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
1333315G1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799825
NSN
5962-01-379-9825
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
MICROCIRCUIT,MEMORY
Related Searches:
5962-8867004LA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799825
NSN
5962-01-379-9825
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799825
NSN
5962-01-379-9825
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
0616230
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799827
NSN
5962-01-379-9827
MFG
OLYMPUS NDT NE INC.
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MINIMUM AND 1.040 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 DECODER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: NONVOLATILE CONTROLLER X 8 CHIP
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
1877AS241-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799827
NSN
5962-01-379-9827
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MINIMUM AND 1.040 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 DECODER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: NONVOLATILE CONTROLLER X 8 CHIP
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
DS1211
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799827
NSN
5962-01-379-9827
MFG
DALLAS SEMICONDUCTOR CORPORATION DBA MAXIM DALLAS DIRECT
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MINIMUM AND 1.040 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 DECODER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: NONVOLATILE CONTROLLER X 8 CHIP
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
A584A429-101
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013799837
NSN
5962-01-379-9837
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.758 INCHES MAXIMUM
BODY WIDTH: 0.758 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 163.00 MILLIAMPERES MAXIMUM INPUT
DESIGN FUNCTION AND QUANTITY: 1 REGISTER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 51 INPUT
MAXIMUM POWER DISSIPATION RATING: 1350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 100 BEAM LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
351-5866-012
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799858
NSN
5962-01-379-9858
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
MEMORY DEVICE TYPE: PROGRAMMED
Related Searches:
676-9253-002
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799858
NSN
5962-01-379-9858
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
MEMORY DEVICE TYPE: PROGRAMMED
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799858
NSN
5962-01-379-9858
MFG
DLA LAND AND MARITIME
Description
MEMORY DEVICE TYPE: PROGRAMMED
Related Searches:
1711410-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013799878
NSN
5962-01-379-9878
MFG
RAYTHEON COMPANY
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
