Featured Products

My Quote Request

No products added yet

5962-01-365-1417

20 Products

BUS65201-600

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651417

NSN

5962-01-365-1417

View More Info

BUS65201-600

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651417

NSN

5962-01-365-1417

MFG

DATA DEVICE CORPORATION

Description

DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 48 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 76 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

2663405G001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651418

NSN

5962-01-365-1418

View More Info

2663405G001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651418

NSN

5962-01-365-1418

MFG

ITT CORPORATION

Description

DESIGN FUNCTION AND QUANTITY: 1 CLOCK
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 94 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

2663505G001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651418

NSN

5962-01-365-1418

View More Info

2663505G001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651418

NSN

5962-01-365-1418

MFG

ITT CORPORATION

Description

DESIGN FUNCTION AND QUANTITY: 1 CLOCK
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 94 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

313-434G005

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651419

NSN

5962-01-365-1419

View More Info

313-434G005

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651419

NSN

5962-01-365-1419

MFG

ITT CORPORATION

Description

DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

3130434G005

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651419

NSN

5962-01-365-1419

View More Info

3130434G005

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651419

NSN

5962-01-365-1419

MFG

ITT CORPORATION

Description

DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

7111-071

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651419

NSN

5962-01-365-1419

View More Info

7111-071

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651419

NSN

5962-01-365-1419

MFG

SPECTRUM TECHNOLOGY INC

Description

DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

2663788G001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651420

NSN

5962-01-365-1420

View More Info

2663788G001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651420

NSN

5962-01-365-1420

MFG

ITT CORPORATION

Description

DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 CONTROL, MEMORY ACCESS AND 1 LATCH AND 3 REGISTER
FEATURES PROVIDED: BURN IN AND HYBRID AND ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 55 INPUT AND 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 94 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

900-11051-1

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651420

NSN

5962-01-365-1420

View More Info

900-11051-1

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013651420

NSN

5962-01-365-1420

MFG

THE BOEING COMPANY DBA BOEING

Description

DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 CONTROL, MEMORY ACCESS AND 1 LATCH AND 3 REGISTER
FEATURES PROVIDED: BURN IN AND HYBRID AND ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 55 INPUT AND 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 94 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

5962-88548010A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

View More Info

5962-88548010A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: LUG IN UNIT E/I FSCM 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-CMOS,ERASABLE PROGRAMMABLE LOGIC DEVICE (ELPD)
SPECIFICATION/STANDARD DATA: 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 76301-75B049016-1001 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 13.5 VOLTS MAXIMUM APPLIED

75B049016-1001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

View More Info

75B049016-1001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

MFG

BOEING COMPANY THE DBA BOEING

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: LUG IN UNIT E/I FSCM 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-CMOS,ERASABLE PROGRAMMABLE LOGIC DEVICE (ELPD)
SPECIFICATION/STANDARD DATA: 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 76301-75B049016-1001 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 13.5 VOLTS MAXIMUM APPLIED

EP900DM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

View More Info

EP900DM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

MFG

ALTERA CORPORATION

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: LUG IN UNIT E/I FSCM 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-CMOS,ERASABLE PROGRAMMABLE LOGIC DEVICE (ELPD)
SPECIFICATION/STANDARD DATA: 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 76301-75B049016-1001 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 13.5 VOLTS MAXIMUM APPLIED

ROM/PROM FAMILY 187

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

View More Info

ROM/PROM FAMILY 187

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651422

NSN

5962-01-365-1422

MFG

DLA LAND AND MARITIME

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: LUG IN UNIT E/I FSCM 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-CMOS,ERASABLE PROGRAMMABLE LOGIC DEVICE (ELPD)
SPECIFICATION/STANDARD DATA: 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 76301-75B049016-1001 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 13.5 VOLTS MAXIMUM APPLIED

78137005-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651423

NSN

5962-01-365-1423

View More Info

78137005-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651423

NSN

5962-01-365-1423

MFG

GETRONICS GOVERNMENT SOLUTIONS LLC

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651423

NSN

5962-01-365-1423

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651423

NSN

5962-01-365-1423

MFG

DLA LAND AND MARITIME

78137241-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651424

NSN

5962-01-365-1424

View More Info

78137241-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651424

NSN

5962-01-365-1424

MFG

GETRONICS GOVERNMENT SOLUTIONS LLC

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651424

NSN

5962-01-365-1424

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651424

NSN

5962-01-365-1424

MFG

DLA LAND AND MARITIME

9986-CCRM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651425

NSN

5962-01-365-1425

View More Info

9986-CCRM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651425

NSN

5962-01-365-1425

MFG

BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.

Description

FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SCADC E/I FSCM K0656
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: PROGRAMMED DEVICE (PAL)
SPECIFICATION/STANDARD DATA: 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: K0656-9986-CCRM DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM ABSOLUTE INPUT AND 22.0 VOLTS MAXIMUM ABSOLUTE INPUT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651425

NSN

5962-01-365-1425

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651425

NSN

5962-01-365-1425

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SCADC E/I FSCM K0656
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: PROGRAMMED DEVICE (PAL)
SPECIFICATION/STANDARD DATA: 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: K0656-9986-CCRM DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM ABSOLUTE INPUT AND 22.0 VOLTS MAXIMUM ABSOLUTE INPUT

9986-CCRP

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651426

NSN

5962-01-365-1426

View More Info

9986-CCRP

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651426

NSN

5962-01-365-1426

MFG

BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SCADC E/I FSCM K0656
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: BIPOLAR METAL-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16-INPUT 8-OUTPUT AND-OR INVERT GATE ARRAY
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510 GOVERNMENT SPECIFICATION AND 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: K0656-9986-CCRQ DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM ABSOLUTE INPUT AND 12.0 VOLTS MAXIMUM ABSOLUTE INPUT

M38510/50401BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651426

NSN

5962-01-365-1426

View More Info

M38510/50401BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013651426

NSN

5962-01-365-1426

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SCADC E/I FSCM K0656
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: BIPOLAR METAL-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16-INPUT 8-OUTPUT AND-OR INVERT GATE ARRAY
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510 GOVERNMENT SPECIFICATION AND 96906-MIL-STD-883 GOVERNMENT STANDARD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: K0656-9986-CCRQ DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM ABSOLUTE INPUT AND 12.0 VOLTS MAXIMUM ABSOLUTE INPUT