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5962-01-356-7422
20 Products
2877903-5
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567422
NSN
5962-01-356-7422
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
Related Searches:
UF32-02
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962013567267
NSN
5962-01-356-7267
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.890 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
BODY WIDTH: 0.770 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER AND 1 MULTIPLEXER AND 1 REGISTER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 36 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
160-5876-01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567268
NSN
5962-01-356-7268
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567268
NSN
5962-01-356-7268
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
160-5875-00
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567269
NSN
5962-01-356-7269
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567269
NSN
5962-01-356-7269
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
08673-80098
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567270
NSN
5962-01-356-7270
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.450 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES NOMINAL
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
III END ITEM IDENTIFICATION: 6625013171023
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567270
NSN
5962-01-356-7270
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.450 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES NOMINAL
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
III END ITEM IDENTIFICATION: 6625013171023
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
53452100A
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567271
NSN
5962-01-356-7271
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AT28C16-200DC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567271
NSN
5962-01-356-7271
MFG
ATMEL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CAT28C16A-20
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567271
NSN
5962-01-356-7271
MFG
CATALYST SEMICONDUCTOR INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DQ2816A-200
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567271
NSN
5962-01-356-7271
MFG
SEEQ TECHNOLOGY INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
KM28C16P-20
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567271
NSN
5962-01-356-7271
MFG
SAMSUNG SEMICONDUCTOR INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013567271
NSN
5962-01-356-7271
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1CL7117CPL
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567417
NSN
5962-01-356-7417
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
Related Searches:
2877903-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567418
NSN
5962-01-356-7418
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
Related Searches:
2877903-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567419
NSN
5962-01-356-7419
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
Related Searches:
2877903-3
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567420
NSN
5962-01-356-7420
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
Related Searches:
2877803-4
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567421
NSN
5962-01-356-7421
MFG
SELEX GALILEO LTD
Description
MICROCIRCUIT,LINEAR
Related Searches:
2877903-4
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013567421
NSN
5962-01-356-7421
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
