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5962-01-356-7422

20 Products

2877903-5

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567422

NSN

5962-01-356-7422

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2877903-5

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567422

NSN

5962-01-356-7422

MFG

RAYTHEON COMPANY

UF32-02

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013567267

NSN

5962-01-356-7267

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UF32-02

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013567267

NSN

5962-01-356-7267

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.890 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
BODY WIDTH: 0.770 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER AND 1 MULTIPLEXER AND 1 REGISTER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 36 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

160-5876-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567268

NSN

5962-01-356-7268

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160-5876-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567268

NSN

5962-01-356-7268

MFG

TEKTRONIX INC. DBA TEKTRONIX

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567268

NSN

5962-01-356-7268

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567268

NSN

5962-01-356-7268

MFG

DLA LAND AND MARITIME

160-5875-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567269

NSN

5962-01-356-7269

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160-5875-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567269

NSN

5962-01-356-7269

MFG

TEKTRONIX INC. DBA TEKTRONIX

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567269

NSN

5962-01-356-7269

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567269

NSN

5962-01-356-7269

MFG

DLA LAND AND MARITIME

08673-80098

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567270

NSN

5962-01-356-7270

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08673-80098

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567270

NSN

5962-01-356-7270

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.450 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES NOMINAL
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
III END ITEM IDENTIFICATION: 6625013171023
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567270

NSN

5962-01-356-7270

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567270

NSN

5962-01-356-7270

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.450 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES NOMINAL
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
III END ITEM IDENTIFICATION: 6625013171023
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

53452100A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

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53452100A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

MFG

BOONTON ELECTRONICS CORPORATION DBA ALLTEL

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

AT28C16-200DC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

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AT28C16-200DC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

MFG

ATMEL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

CAT28C16A-20

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

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CAT28C16A-20

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

MFG

CATALYST SEMICONDUCTOR INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

DQ2816A-200

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

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DQ2816A-200

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

MFG

SEEQ TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

KM28C16P-20

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

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KM28C16P-20

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

MFG

SAMSUNG SEMICONDUCTOR INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013567271

NSN

5962-01-356-7271

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -10.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

1CL7117CPL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567417

NSN

5962-01-356-7417

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1CL7117CPL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567417

NSN

5962-01-356-7417

MFG

INTERSIL CORPORATION

2877903-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567418

NSN

5962-01-356-7418

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2877903-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567418

NSN

5962-01-356-7418

MFG

RAYTHEON COMPANY

2877903-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567419

NSN

5962-01-356-7419

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2877903-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567419

NSN

5962-01-356-7419

MFG

RAYTHEON COMPANY

2877903-3

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567420

NSN

5962-01-356-7420

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2877903-3

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567420

NSN

5962-01-356-7420

MFG

RAYTHEON COMPANY

2877803-4

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567421

NSN

5962-01-356-7421

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2877803-4

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567421

NSN

5962-01-356-7421

MFG

SELEX GALILEO LTD

2877903-4

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567421

NSN

5962-01-356-7421

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2877903-4

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013567421

NSN

5962-01-356-7421

MFG

RAYTHEON COMPANY