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5962-01-351-9513

20 Products

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519513

NSN

5962-01-351-9513

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519513

NSN

5962-01-351-9513

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR INVERT GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

G450456-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519513

NSN

5962-01-351-9513

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G450456-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519513

NSN

5962-01-351-9513

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR INVERT GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

G450456-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519513

NSN

5962-01-351-9513

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G450456-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519513

NSN

5962-01-351-9513

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR INVERT GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3820302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

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5962-3820302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

G109773-501

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

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G109773-501

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

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M38510/20302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

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ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519514

NSN

5962-01-351-9514

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3820302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

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5962-3820302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

G109773-502

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

View More Info

G109773-502

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

View More Info

M38510/20302BEA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

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ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519515

NSN

5962-01-351-9515

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

G437992-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

View More Info

G437992-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 180.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

G437992-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

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G437992-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 180.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

M38510/50404BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

View More Info

M38510/50404BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 180.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519516

NSN

5962-01-351-9516

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 180.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

5962-8768201RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

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5962-8768201RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 165.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G437990-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

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G437990-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 165.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G437990-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

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G437990-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 165.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519517

NSN

5962-01-351-9517

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 165.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G437992-201

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519518

NSN

5962-01-351-9518

View More Info

G437992-201

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013519518

NSN

5962-01-351-9518

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 180.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMED
III END ITEM IDENTIFICATION: SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE