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5962-01-337-3535
20 Products
ROM/PROM FAMILY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373535
NSN
5962-01-337-3535
ROM/PROM FAMILY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373535
NSN
5962-01-337-3535
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
53S881J/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373535
NSN
5962-01-337-3535
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
82S181BJA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373535
NSN
5962-01-337-3535
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC4418-00
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373535
NSN
5962-01-337-3535
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M235A351-100G
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373535
NSN
5962-01-337-3535
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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29631DMB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
53S881J/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
82S181BJA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC4418-00
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M235A351-101E
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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ROM/PROM FAIMLY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
ROM/PROM FAIMLY 028
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013373536
NSN
5962-01-337-3536
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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0N365216-3
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013374262
NSN
5962-01-337-4262
MFG
NATIONAL SECURITY AGENCY
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013374263
NSN
5962-01-337-4263
MFG
EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KTV1918BL
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013374263
NSN
5962-01-337-4263
MFG
EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KTV1918BL
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
0N373948-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013374264
NSN
5962-01-337-4264
MFG
NATIONAL SECURITY AGENCY
Description
MICROCIRCUIT,DIGITAL
Related Searches:
13084708
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013375023
NSN
5962-01-337-5023
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013375023
NSN
5962-01-337-5023
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013375023
NSN
5962-01-337-5023
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013375023
NSN
5962-01-337-5023
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HYBRID
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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ADSP-1012ATD/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013375024
NSN
5962-01-337-5024
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013375024
NSN
5962-01-337-5024
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 3.160 INCHES MINIMUM AND 3.240 INCHES MAXIMUM
BODY WIDTH: 0.884 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER, 12 X 12 PARALLEL ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND LOW POWER
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 35 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 64 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
