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5962-01-327-6945

20 Products

7109860-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276945

NSN

5962-01-327-6945

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7109860-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276945

NSN

5962-01-327-6945

MFG

VECTRON INTERNATIONAL INC .

11311864G1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013274619

NSN

5962-01-327-4619

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11311864G1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013274619

NSN

5962-01-327-4619

MFG

ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST

31 215-011

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276020

NSN

5962-01-327-6020

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31 215-011

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276020

NSN

5962-01-327-6020

MFG

ROCKWELL COLLINS DEUTSCHLAND GMBH

Description

FEATURES PROVIDED: STATIC OPERATION AND HIGH SPEED AND LOW POWER
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

IDT6116LA120TDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276020

NSN

5962-01-327-6020

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IDT6116LA120TDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276020

NSN

5962-01-327-6020

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

FEATURES PROVIDED: STATIC OPERATION AND HIGH SPEED AND LOW POWER
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

5R8065-042-0002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276021

NSN

5962-01-327-6021

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5R8065-042-0002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276021

NSN

5962-01-327-6021

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

BODY HEIGHT: 0.180 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
BODY LENGTH: 1.158 INCHES MINIMUM AND 1.198 INCHES MAXIMUM
BODY WIDTH: 1.158 INCHES MINIMUM AND 1.198 INCHES MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: BEAM CHIP
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ESD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

SAB82258A-R

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276022

NSN

5962-01-327-6022

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SAB82258A-R

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276022

NSN

5962-01-327-6022

MFG

SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
SPECIAL FEATURES: ESD

A584A950-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276023

NSN

5962-01-327-6023

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A584A950-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276023

NSN

5962-01-327-6023

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 8 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: OCTAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT54FCT240ADB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276023

NSN

5962-01-327-6023

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IDT54FCT240ADB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276023

NSN

5962-01-327-6023

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 8 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: OCTAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

P54PCT240ADMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276023

NSN

5962-01-327-6023

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P54PCT240ADMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276023

NSN

5962-01-327-6023

MFG

PERFORMANCE SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 8 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: OCTAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

2819744-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276025

NSN

5962-01-327-6025

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2819744-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276025

NSN

5962-01-327-6025

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 131072
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

5962-3821004BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

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5962-3821004BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

980-2861

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

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980-2861

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

A574A980-2861

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

View More Info

A574A980-2861

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/21004BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

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M38510/21004BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013276565

NSN

5962-01-327-6565

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

BQ2201PN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276566

NSN

5962-01-327-6566

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BQ2201PN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276566

NSN

5962-01-327-6566

MFG

BENCHMARQ MICROELECTRONICS INC

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: MONOLITHIC AND W/ENABLE
III END ITEM IDENTIFICATION: 6625-01-284-8256 METER,MODULATION
III OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DS1210

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276566

NSN

5962-01-327-6566

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DS1210

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276566

NSN

5962-01-327-6566

MFG

DALLAS SEMICONDUCTOR CORPORATION DBA MAXIM DALLAS DIRECT

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: MONOLITHIC AND W/ENABLE
III END ITEM IDENTIFICATION: 6625-01-284-8256 METER,MODULATION
III OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TL497AIN

MICROCIRCUIT

NSN, MFG P/N

5962013276778

NSN

5962-01-327-6778

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TL497AIN

MICROCIRCUIT

NSN, MFG P/N

5962013276778

NSN

5962-01-327-6778

MFG

RAYTHEON COMPANY

4130-009

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276945

NSN

5962-01-327-6945

View More Info

4130-009

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276945

NSN

5962-01-327-6945

MFG

SPECTRUM TECHNOLOGY INC

4130-009P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276945

NSN

5962-01-327-6945

View More Info

4130-009P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013276945

NSN

5962-01-327-6945

MFG

VECTRON INTERNATIONAL INC .