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5962-01-324-9619

20 Products

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249619

NSN

5962-01-324-9619

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249619

NSN

5962-01-324-9619

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

380-10028-439

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

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380-10028-439

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

MFG

THE BOEING COMPANY DBA BOEING

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

380-10588-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

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380-10588-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

MFG

THE BOEING COMPANY DBA BOEING

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

458-59312-507

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

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458-59312-507

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

MFG

THE BOEING COMPANY DBA BOEING

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

EP1800GM883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

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EP1800GM883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

MFG

ALTERA CORPORATION

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MG5C180-90

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

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MG5C180-90

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

MFG

INTEL CORP SALES OFFICE

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013249620

NSN

5962-01-324-9620

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.137 INCHES MAXIMUM
BODY LENGTH: 1.112 INCHES MAXIMUM
BODY WIDTH: 1.112 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 72 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

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4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: W/ACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.1 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

8516533-103

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

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8516533-103

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: W/ACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.1 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

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M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: W/ACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.1 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249621

NSN

5962-01-324-9621

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: W/ACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.1 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

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4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

8516533-104

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

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8516533-104

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

View More Info

M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249622

NSN

5962-01-324-9622

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

View More Info

4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

8516533-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

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8516533-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

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M38510/20904BJA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249623

NSN

5962-01-324-9623

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND SCHOTTKY
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
III OVERALL LENGTH: 1.290 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 950.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249624

NSN

5962-01-324-9624

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4040967-604

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013249624

NSN

5962-01-324-9624

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: W/ACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.425 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.1 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE