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5962-01-296-7598
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ROM/PROM FAMILY 119
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967598
NSN
5962-01-296-7598
ROM/PROM FAMILY 119
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967598
NSN
5962-01-296-7598
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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LT350AT
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967599
NSN
5962-01-296-7599
MFG
LINEAR TECHNOLOGY CORPORATION DBA LINEAR TECHNOLOGY
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.570 INCHES MAXIMUM
BODY WIDTH: 0.395 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: MONOLITHIC
III OVERALL HEIGHT: 0.180 INCHES MAXIMUM
III OVERALL LENGTH: 1.130 INCHES MAXIMUM
III OVERALL WIDTH: 0.395 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: 0.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 FLAT LEADS
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3271-0827-600
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967600
NSN
5962-01-296-7600
MFG
AEROFLEX WICHITA INC.
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: PROGRAMMABLE AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967600
NSN
5962-01-296-7600
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: PROGRAMMABLE AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967600
NSN
5962-01-296-7600
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: PROGRAMMABLE AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
P8276
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012967600
NSN
5962-01-296-7600
MFG
INTEL CORP SALES OFFICE
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: PROGRAMMABLE AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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717382-116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012967601
NSN
5962-01-296-7601
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY AND W/CLOCK
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
III OVERALL WIDTH: 0.320 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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M38510/20401BEA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012967601
NSN
5962-01-296-7601
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY AND W/CLOCK
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
III OVERALL WIDTH: 0.320 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012967601
NSN
5962-01-296-7601
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY AND W/CLOCK
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
III OVERALL WIDTH: 0.320 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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581R500L12
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968220
NSN
5962-01-296-8220
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND POSITIVE OUTPUTS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 385.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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M38510/07901BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968220
NSN
5962-01-296-8220
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND POSITIVE OUTPUTS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 385.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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160612-03
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968221
NSN
5962-01-296-8221
MFG
GE AVIATION SYSTEMS LLC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
168693-04
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968222
NSN
5962-01-296-8222
MFG
GE AVIATION SYSTEMS LLC
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012968381
NSN
5962-01-296-8381
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.305 INCHES MINIMUM AND 0.355 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND INTERNALLY COMPENSATED AND WIDEBAND
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JM38510-12202BGX
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/122 GOVERNMENT SPECIFICATION
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER OR TIN
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143503406
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968382
NSN
5962-01-296-8382
MFG
EATON CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: ADJUSTABLE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968382
NSN
5962-01-296-8382
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: ADJUSTABLE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
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143503188
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968383
NSN
5962-01-296-8383
MFG
EATON CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968383
NSN
5962-01-296-8383
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968384
NSN
5962-01-296-8384
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012968386
NSN
5962-01-296-8386
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, SHIFT, PARALLEL
FEATURES PROVIDED: COMPLEMENTARY OUTPUTS AND PARALLEL OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
