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5962-01-294-4764

20 Products

ROM/PROM FAMILY 049

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

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ROM/PROM FAMILY 049

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.935 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725903-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

View More Info

725903-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.935 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725903-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

View More Info

725903-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.935 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AMPAL16L8ADMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

View More Info

AMPAL16L8ADMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944764

NSN

5962-01-294-4764

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.935 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

49517-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

View More Info

49517-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

View More Info

725900-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

View More Info

725900-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PAL16R4AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

View More Info

PAL16R4AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

MFG

MMI/AMD

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

View More Info

ROM/PROM FAMILY 059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944765

NSN

5962-01-294-4765

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

49518-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

View More Info

49518-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

View More Info

725900-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

View More Info

725900-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PAL16R4AMJ883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

View More Info

PAL16R4AMJ883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

MFG

MMI/AMD

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 059

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

View More Info

ROM/PROM FAMILY 059

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944766

NSN

5962-01-294-4766

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

49521-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

View More Info

49521-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

View More Info

725900-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

View More Info

725900-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PAL16R4AMJ883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

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PAL16R4AMJ883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

MFG

MMI/AMD

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 059

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

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ROM/PROM FAMILY 059

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012944767

NSN

5962-01-294-4767

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

49524-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944768

NSN

5962-01-294-4768

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49524-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012944768

NSN

5962-01-294-4768

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE