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5962-01-275-6637

20 Products

ROM/PROM FAMILY 029

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012756637

NSN

5962-01-275-6637

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ROM/PROM FAMILY 029

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012756637

NSN

5962-01-275-6637

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT39C10BD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756639

NSN

5962-01-275-6639

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IDT39C10BD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756639

NSN

5962-01-275-6639

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.195 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
BODY LENGTH: 2.450 INCHES MINIMUM AND 2.490 INCHES MAXIMUM
BODY WIDTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SEQUENCER
FEATURES PROVIDED: W/ENABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT39C10BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756639

NSN

5962-01-275-6639

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IDT39C10BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756639

NSN

5962-01-275-6639

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.195 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
BODY LENGTH: 2.450 INCHES MINIMUM AND 2.490 INCHES MAXIMUM
BODY WIDTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SEQUENCER
FEATURES PROVIDED: W/ENABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT74FCT138D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756640

NSN

5962-01-275-6640

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IDT74FCT138D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756640

NSN

5962-01-275-6640

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF EIGHT LINE
FEATURES PROVIDED: W/ENABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CY7C245-45WC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012756641

NSN

5962-01-275-6641

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CY7C245-45WC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012756641

NSN

5962-01-275-6641

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012756641

NSN

5962-01-275-6641

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012756641

NSN

5962-01-275-6641

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

4013B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756776

NSN

5962-01-275-6776

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4013B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756776

NSN

5962-01-275-6776

MFG

OAI ELECTRONICS INC

4030B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756777

NSN

5962-01-275-6777

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4030B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012756777

NSN

5962-01-275-6777

MFG

OAI ELECTRONICS INC

RM101T/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012757072

NSN

5962-01-275-7072

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RM101T/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012757072

NSN

5962-01-275-7072

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

850-007-365

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012757075

NSN

5962-01-275-7075

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850-007-365

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012757075

NSN

5962-01-275-7075

MFG

PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

1596/BIAJC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012757076

NSN

5962-01-275-7076

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1596/BIAJC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012757076

NSN

5962-01-275-7076

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MODULATOR AND 1 DEMODULATOR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

805519-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757077

NSN

5962-01-275-7077

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805519-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757077

NSN

5962-01-275-7077

MFG

RAYTHEON COMPANY

Description

BODY LENGTH: 1.235 INCHES MINIMUM AND 1.295 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN47054J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757077

NSN

5962-01-275-7077

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SN47054J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757077

NSN

5962-01-275-7077

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY LENGTH: 1.235 INCHES MINIMUM AND 1.295 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

805427-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757078

NSN

5962-01-275-7078

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805427-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757078

NSN

5962-01-275-7078

MFG

RAYTHEON COMPANY

Description

DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

TDS5122

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757078

NSN

5962-01-275-7078

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TDS5122

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757078

NSN

5962-01-275-7078

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV

Description

DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

TDS5957

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757078

NSN

5962-01-275-7078

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TDS5957

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757078

NSN

5962-01-275-7078

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV

Description

DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

6330-1N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757083

NSN

5962-01-275-7083

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6330-1N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757083

NSN

5962-01-275-7083

MFG

MMI/AMD

Description

FEATURES PROVIDED: LOW VOLTAGE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

63S081N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757083

NSN

5962-01-275-7083

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63S081N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757083

NSN

5962-01-275-7083

MFG

MMI/AMD

Description

FEATURES PROVIDED: LOW VOLTAGE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

A-80475WET

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757084

NSN

5962-01-275-7084

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A-80475WET

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757084

NSN

5962-01-275-7084

MFG

THALES AVIONICS LTD

Description

BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 1.065 INCHES MINIMUM AND 1.100 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
FEATURES PROVIDED: HIGH RELIABILITY AND 3-STATE OUTPUT AND HIGH NOISE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

A1-80475ET

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757084

NSN

5962-01-275-7084

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A1-80475ET

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012757084

NSN

5962-01-275-7084

MFG

THALES AVIONICS LTD

Description

BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 1.065 INCHES MINIMUM AND 1.100 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
FEATURES PROVIDED: HIGH RELIABILITY AND 3-STATE OUTPUT AND HIGH NOISE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC