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5962-01-273-5192

20 Products

77-084669-24

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012735192

NSN

5962-01-273-5192

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77-084669-24

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012735192

NSN

5962-01-273-5192

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: 77-084669-24
FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 15280
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: DIFFERENTIATED BY PROGRAM
THE MANUFACTURERS DATA:

SL50279

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012734264

NSN

5962-01-273-4264

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SL50279

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012734264

NSN

5962-01-273-4264

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01306BFA
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/CLEAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/13
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/13 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 58.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 58.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

161560

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

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161560

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

161909

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

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161909

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5349-1J/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

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5349-1J/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HM-1-7649-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

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HM-1-7649-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 016

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

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ROM/PROM FAMILY 016

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734265

NSN

5962-01-273-4265

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

15-1252923-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

View More Info

15-1252923-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5300-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

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5300-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20301BEB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

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M38510/20301BEB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

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ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734266

NSN

5962-01-273-4266

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

7143323-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

View More Info

7143323-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 185.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE AND W/ENABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7314874-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

View More Info

7314874-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 185.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE AND W/ENABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7321500-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

View More Info

7321500-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 185.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE AND W/ENABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7907566-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

View More Info

7907566-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 185.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE AND W/ENABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

82S191

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

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82S191

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 185.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE AND W/ENABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 029

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

View More Info

ROM/PROM FAMILY 029

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012734267

NSN

5962-01-273-4267

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CURRENT RATING PER CHARACTERISTIC: 185.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE AND W/ENABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

11C70DCQR

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012734268

NSN

5962-01-273-4268

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11C70DCQR

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012734268

NSN

5962-01-273-4268

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE, MASTER SLAVE, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND ASYNCHRONOUS AND W/CLEAR AND W/CLOCK AND W/ENABLE AND BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MAXIMUM POWER SOURCE

500258-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012734437

NSN

5962-01-273-4437

View More Info

500258-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012734437

NSN

5962-01-273-4437

MFG

AST RESEARCH INC

MC10192L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012735191

NSN

5962-01-273-5191

View More Info

MC10192L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012735191

NSN

5962-01-273-5191

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, BUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC