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5962-01-268-6365
20 Products
SN74L20N00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686365
NSN
5962-01-268-6365
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02002BCA
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 8.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74L20J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686365
NSN
5962-01-268-6365
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02002BCA
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 8.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
48704-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686682
NSN
5962-01-268-6682
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
722959-50
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686682
NSN
5962-01-268-6682
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
722959-7
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686682
NSN
5962-01-268-6682
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
D27128-25
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686682
NSN
5962-01-268-6682
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
ROM/PROM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012686682
NSN
5962-01-268-6682
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
246723-6-8000
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686683
NSN
5962-01-268-6683
MFG
ACCRO GASKET INC
Description
(NON-CORE DATA) BIT QUANTITY: 131072
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 16K X 8 UVEPROM
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
48706-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686683
NSN
5962-01-268-6683
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 16K X 8 UVEPROM
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686683
NSN
5962-01-268-6683
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 16K X 8 UVEPROM
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686683
NSN
5962-01-268-6683
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 16K X 8 UVEPROM
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 091
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686683
NSN
5962-01-268-6683
ROM/PROM FAMILY 091
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686683
NSN
5962-01-268-6683
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 16K X 8 UVEPROM
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
48710-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686684
NSN
5962-01-268-6684
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686684
NSN
5962-01-268-6684
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686684
NSN
5962-01-268-6684
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D27128-25
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686684
NSN
5962-01-268-6684
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686684
NSN
5962-01-268-6684
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
48712-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686685
NSN
5962-01-268-6685
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686685
NSN
5962-01-268-6685
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012686685
NSN
5962-01-268-6685
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.227 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
