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5962-01-237-5515

20 Products

11504566-133

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375515

NSN

5962-01-237-5515

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11504566-133

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375515

NSN

5962-01-237-5515

MFG

U S ARMY AVIATION AND MISSILE COMMAND

SN54HC74J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375398

NSN

5962-01-237-5398

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SN54HC74J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375398

NSN

5962-01-237-5398

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, EDGE TRIGGERED, D-TYPE
FEATURES PROVIDED: W/CLEAR AND W/PRESET AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

84-30534-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375399

NSN

5962-01-237-5399

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84-30534-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375399

NSN

5962-01-237-5399

MFG

RAYTHEON E-SYSTEMS INC

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.405 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-4 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND BURN IN AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 925.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

NH84-30534-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375399

NSN

5962-01-237-5399

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NH84-30534-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375399

NSN

5962-01-237-5399

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.405 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-4 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND BURN IN AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 925.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

SNJ55150JG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375399

NSN

5962-01-237-5399

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SNJ55150JG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375399

NSN

5962-01-237-5399

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.405 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-4 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND BURN IN AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 925.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

915465

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

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915465

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 0.970 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

IDT6167L100CB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

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IDT6167L100CB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 0.970 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

IDT6167LA100CB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

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IDT6167LA100CB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 0.970 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

IDT6167LA100DB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

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IDT6167LA100DB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375400

NSN

5962-01-237-5400

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 0.970 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

72-01017-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

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72-01017-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

9128-20PC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

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9128-20PC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM9128-20DC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

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AM9128-20DC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SYD2128-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

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SYD2128-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012375401

NSN

5962-01-237-5401

MFG

SYNERTEK

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

72-01030-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375402

NSN

5962-01-237-5402

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72-01030-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375402

NSN

5962-01-237-5402

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.165 INCHES NOMINAL
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.620 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

Z0842004DEE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375402

NSN

5962-01-237-5402

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Z0842004DEE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375402

NSN

5962-01-237-5402

MFG

ZILOG INC

Description

BODY HEIGHT: 0.165 INCHES NOMINAL
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.620 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

Z8420ADE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375402

NSN

5962-01-237-5402

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Z8420ADE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375402

NSN

5962-01-237-5402

MFG

ZILOG INC

Description

BODY HEIGHT: 0.165 INCHES NOMINAL
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.620 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

360412

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012375404

NSN

5962-01-237-5404

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360412

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012375404

NSN

5962-01-237-5404

MFG

CALIFORNIA INSTRUMENTS CORP

Description

(NON-CORE DATA) BIT QUANTITY: 9
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: LOW POWER AND THIN FILM AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 875.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

ADC1001CCD-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012375404

NSN

5962-01-237-5404

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ADC1001CCD-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012375404

NSN

5962-01-237-5404

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 9
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: LOW POWER AND THIN FILM AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 875.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

ADC1001CCJ-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012375404

NSN

5962-01-237-5404

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ADC1001CCJ-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012375404

NSN

5962-01-237-5404

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 9
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: LOW POWER AND THIN FILM AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 875.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

1-7685B3558-133

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375515

NSN

5962-01-237-5515

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1-7685B3558-133

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012375515

NSN

5962-01-237-5515

MFG

INTERSIL CORPORATION