Featured Products

My Quote Request

No products added yet

5962-01-216-6104

20 Products

MC14046BAL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166104

NSN

5962-01-216-6104

View More Info

MC14046BAL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166104

NSN

5962-01-216-6104

MFG

FREESCALE SEMICONDUCTOR INC.

207038-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012166106

NSN

5962-01-216-6106

View More Info

207038-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012166106

NSN

5962-01-216-6106

MFG

CUBIC DEFENSE APPLICATIONS INC.

MD2732A45/B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012166106

NSN

5962-01-216-6106

View More Info

MD2732A45/B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012166106

NSN

5962-01-216-6106

MFG

INTEL CORP SALES OFFICE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012166106

NSN

5962-01-216-6106

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012166106

NSN

5962-01-216-6106

MFG

DLA LAND AND MARITIME

156-0885-05

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

View More Info

156-0885-05

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

MFG

TEKTRONIX INC. DBA TEKTRONIX

156-1627-00

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

View More Info

156-1627-00

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

MFG

TEKTRONIX INC. DBA TEKTRONIX

89300461

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

View More Info

89300461

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

MFG

THALES AIR DEFENCE

TL594CN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

View More Info

TL594CN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

UC494A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

View More Info

UC494A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

MFG

MICRO USPD INC

UC494ACN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

View More Info

UC494ACN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012166197

NSN

5962-01-216-6197

MFG

MICRO USPD INC

9360859-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166199

NSN

5962-01-216-6199

View More Info

9360859-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166199

NSN

5962-01-216-6199

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

HDR2106-34S

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166199

NSN

5962-01-216-6199

View More Info

HDR2106-34S

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166199

NSN

5962-01-216-6199

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

5962-3832302BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

View More Info

5962-3832302BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/32302BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, BUS BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL WIDTH: 0.505 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 121.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/323
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510.323 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3832302BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

View More Info

5962-3832302BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/32302BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, BUS BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL WIDTH: 0.505 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 121.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/323
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510.323 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/32302BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

View More Info

M38510/32302BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/32302BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, BUS BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL WIDTH: 0.505 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 121.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/323
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510.323 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/32302BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

View More Info

M38510/32302BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/32302BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, BUS BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL WIDTH: 0.505 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 121.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/323
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510.323 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/32320BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

View More Info

M38510/32320BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166201

NSN

5962-01-216-6201

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/32302BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, BUS BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL WIDTH: 0.505 INCHES MINIMUM AND 0.630 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 121.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/323
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510.323 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3830204BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166202

NSN

5962-01-216-6202

View More Info

5962-3830204BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166202

NSN

5962-01-216-6202

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30204BDA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, NOR
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 68.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/302
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/302 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3830204BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166202

NSN

5962-01-216-6202

View More Info

5962-3830204BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166202

NSN

5962-01-216-6202

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30204BDA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, NOR
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 68.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/302
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/302 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3830204BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166202

NSN

5962-01-216-6202

View More Info

5962-3830204BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012166202

NSN

5962-01-216-6202

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30204BDA
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, NOR
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 68.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/302
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/302 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE