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5962-01-205-1992

20 Products

SC5962-0368-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

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SC5962-0368-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

MFG

ALBANY INTL CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05152BEA
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND MONOLITHIC AND W/RESET AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 5830-01-145-2462 MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

M38510/05152BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

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M38510/05152BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05152BEA
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND MONOLITHIC AND W/RESET AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 5830-01-145-2462 MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

M38510/05152BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

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M38510/05152BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05152BEA
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND MONOLITHIC AND W/RESET AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 5830-01-145-2462 MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

M38510/05152BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

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M38510/05152BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051992

NSN

5962-01-205-1992

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05152BEA
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND MONOLITHIC AND W/RESET AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 5830-01-145-2462 MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY

45898-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

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45898-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND SCHOTTKY AND WIRE-OR OUTPUTS
III END ITEM IDENTIFICATION: PROCESSOR GROUP,SIGNAL DATA OL-224(V)1-3
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

722919-51

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

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722919-51

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND SCHOTTKY AND WIRE-OR OUTPUTS
III END ITEM IDENTIFICATION: PROCESSOR GROUP,SIGNAL DATA OL-224(V)1-3
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

93453DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

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93453DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND SCHOTTKY AND WIRE-OR OUTPUTS
III END ITEM IDENTIFICATION: PROCESSOR GROUP,SIGNAL DATA OL-224(V)1-3
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012051994

NSN

5962-01-205-1994

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND SCHOTTKY AND WIRE-OR OUTPUTS
III END ITEM IDENTIFICATION: PROCESSOR GROUP,SIGNAL DATA OL-224(V)1-3
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

351-8159-150

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051995

NSN

5962-01-205-1995

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351-8159-150

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051995

NSN

5962-01-205-1995

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05254BCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND W/INDEPENDENT OUTPUTS AND 2-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/52
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/52 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

M38510/05254BCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051995

NSN

5962-01-205-1995

View More Info

M38510/05254BCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051995

NSN

5962-01-205-1995

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05254BCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND W/INDEPENDENT OUTPUTS AND 2-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/52
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/52 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

M38510/05254BCX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051995

NSN

5962-01-205-1995

View More Info

M38510/05254BCX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051995

NSN

5962-01-205-1995

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05254BCB
DESIGN FUNCTION AND QUANTITY: 3 GATE, NOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND W/INDEPENDENT OUTPUTS AND 2-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/52
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/52 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

351-3631-30

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

View More Info

351-3631-30

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.145 INCHES NOMINAL
BODY LENGTH: 1.010 INCHES MAXIMUM
BODY WIDTH: 0.298 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

54HC373J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

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54HC373J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.145 INCHES NOMINAL
BODY LENGTH: 1.010 INCHES MAXIMUM
BODY WIDTH: 0.298 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

9338 055 20682

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

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9338 055 20682

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

MFG

THALES OPTRONIQUE SA

Description

BODY HEIGHT: 0.145 INCHES NOMINAL
BODY LENGTH: 1.010 INCHES MAXIMUM
BODY WIDTH: 0.298 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

CD54HC373F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

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CD54HC373F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.145 INCHES NOMINAL
BODY LENGTH: 1.010 INCHES MAXIMUM
BODY WIDTH: 0.298 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

MM54HC373J/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

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MM54HC373J/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.145 INCHES NOMINAL
BODY LENGTH: 1.010 INCHES MAXIMUM
BODY WIDTH: 0.298 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

SN54HC373J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

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SN54HC373J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051996

NSN

5962-01-205-1996

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.145 INCHES NOMINAL
BODY LENGTH: 1.010 INCHES MAXIMUM
BODY WIDTH: 0.298 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

AM2833DCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051997

NSN

5962-01-205-1997

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AM2833DCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051997

NSN

5962-01-205-1997

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 1024
BODY HEIGHT: 0.025 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.530 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE

932PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051998

NSN

5962-01-205-1998

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932PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051998

NSN

5962-01-205-1998

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND BUFFER
FEATURES PROVIDED: MEDIUM POWER AND MEDIUM SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

012-109354-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051999

NSN

5962-01-205-1999

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012-109354-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012051999

NSN

5962-01-205-1999

MFG

ITT INDUSTRIES INC SYSTEMS DIV

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 DETECTOR, LOW FREQUENCY AND 1 DETECTOR, PHASE AND 1 AMPLIFIER, DC
FEATURES PROVIDED: HERMETICALLY SEALED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTIONAL GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER AND GOLD AND TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-1035AS165 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE