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5962-01-201-4039
20 Products
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014039
NSN
5962-01-201-4039
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014039
NSN
5962-01-201-4039
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722919-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014039
NSN
5962-01-201-4039
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93453DMQC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014039
NSN
5962-01-201-4039
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
42554
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014040
NSN
5962-01-201-4040
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722919-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014040
NSN
5962-01-201-4040
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93453DMQC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014040
NSN
5962-01-201-4040
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014040
NSN
5962-01-201-4040
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014040
NSN
5962-01-201-4040
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
42564
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014041
NSN
5962-01-201-4041
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722912-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014041
NSN
5962-01-201-4041
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20402BEA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014041
NSN
5962-01-201-4041
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014041
NSN
5962-01-201-4041
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014041
NSN
5962-01-201-4041
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
42903-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014042
NSN
5962-01-201-4042
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722919-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014042
NSN
5962-01-201-4042
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93453DMQC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014042
NSN
5962-01-201-4042
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014042
NSN
5962-01-201-4042
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012014042
NSN
5962-01-201-4042
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND SCHOTTKY AND PROGRAMMED AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726017-2 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1811778
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012014043
NSN
5962-01-201-4043
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F112/BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012014043
NSN
5962-01-201-4043
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F112BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012014043
NSN
5962-01-201-4043
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F112DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012014043
NSN
5962-01-201-4043
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6404297-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012014043
NSN
5962-01-201-4043
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
