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5962-01-163-9232

20 Products

SL78617

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011639232

NSN

5962-01-163-9232

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SL78617

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011639232

NSN

5962-01-163-9232

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -35.0 VOLTS MAXIMUM POWER SOURCE

SG120T-12/09256

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011639232

NSN

5962-01-163-9232

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SG120T-12/09256

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011639232

NSN

5962-01-163-9232

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -35.0 VOLTS MAXIMUM POWER SOURCE

SG9256

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011639232

NSN

5962-01-163-9232

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SG9256

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011639232

NSN

5962-01-163-9232

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -35.0 VOLTS MAXIMUM POWER SOURCE

DH13363

MICROCIRCUIT

NSN, MFG P/N

5962011639234

NSN

5962-01-163-9234

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DH13363

MICROCIRCUIT

NSN, MFG P/N

5962011639234

NSN

5962-01-163-9234

MFG

ADVANCED MICRO DEVICES INC DBA A M D

DH13661

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

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DH13661

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 134.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HL78662

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

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HL78662

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 134.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SC5962-0278

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

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SC5962-0278

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

MFG

DRS ICAS, LLC

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 134.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SC5962-0278-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

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SC5962-0278-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639235

NSN

5962-01-163-9235

MFG

DRS ICAS, LLC

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 134.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM4055D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

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AM4055D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

DH40137

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

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DH40137

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

MM4055D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

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MM4055D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

SC5962-0127-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

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SC5962-0127-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639237

NSN

5962-01-163-9237

MFG

DRS ICAS, LLC

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 700.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

DH50813

MICROCIRCUIT

NSN, MFG P/N

5962011639239

NSN

5962-01-163-9239

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DH50813

MICROCIRCUIT

NSN, MFG P/N

5962011639239

NSN

5962-01-163-9239

MFG

ADVANCED MICRO DEVICES INC DBA A M D

AM2813ADCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639240

NSN

5962-01-163-9240

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AM2813ADCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639240

NSN

5962-01-163-9240

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 288
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND W/RESET
III END ITEM IDENTIFICATION: RADIO-TELEMETRIC DATA SET AN/SRQ-4
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE

AM2813ADLB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639240

NSN

5962-01-163-9240

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AM2813ADLB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639240

NSN

5962-01-163-9240

MFG

MSIS SEMICONDUCTOR INC

Description

(NON-CORE DATA) BIT QUANTITY: 288
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND W/RESET
III END ITEM IDENTIFICATION: RADIO-TELEMETRIC DATA SET AN/SRQ-4
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE

DH9723

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639240

NSN

5962-01-163-9240

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DH9723

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011639240

NSN

5962-01-163-9240

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 288
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND W/RESET
III END ITEM IDENTIFICATION: RADIO-TELEMETRIC DATA SET AN/SRQ-4
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -7.0 VOLTS MAXIMUM POWER SOURCE

7849152

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

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7849152

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND W/ENABLE AND W/ACTIVE PULL-UP
III END ITEM IDENTIFICATION: AN/FPS-117 RADAR SYSTEM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

7849152P001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

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7849152P001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND W/ENABLE AND W/ACTIVE PULL-UP
III END ITEM IDENTIFICATION: AN/FPS-117 RADAR SYSTEM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

82S129

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

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82S129

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND W/ENABLE AND W/ACTIVE PULL-UP
III END ITEM IDENTIFICATION: AN/FPS-117 RADAR SYSTEM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/20302BEB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

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M38510/20302BEB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011639431

NSN

5962-01-163-9431

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND W/ENABLE AND W/ACTIVE PULL-UP
III END ITEM IDENTIFICATION: AN/FPS-117 RADAR SYSTEM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE