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5962-01-155-6151
20 Products
ROM/PROM FAMILY 005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011556151
NSN
5962-01-155-6151
ROM/PROM FAMILY 005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011556151
NSN
5962-01-155-6151
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/ENABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
53S841
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
82S185F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B2672
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC5145
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM1-7685-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20902BVA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20902BVB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
PC73618-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM HEAD 007
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
ROM/PROM HEAD 007
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
S82S185I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SSM1215
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011555679
NSN
5962-01-155-5679
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20902BVA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
3281233
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011555680
NSN
5962-01-155-5680
MFG
NAVAL SEA SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
351-8612-012
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011555680
NSN
5962-01-155-5680
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
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MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE
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LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/ENABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/ENABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011556150
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011556150
NSN
5962-01-155-6150
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/ENABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/ENABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/ENABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
