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5962-01-146-8639
20 Products
SN54LS122JA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011468639
NSN
5962-01-146-8639
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SN54LS175AJ
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011468640
NSN
5962-01-146-8640
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
Q67000-H1712-Z
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011468641
NSN
5962-01-146-8641
MFG
EPCOS AG
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY, TEN TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SN54LS147J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011468641
NSN
5962-01-146-8641
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY, TEN TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SN54LS147JA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011468641
NSN
5962-01-146-8641
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY, TEN TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
Q67000-L258-Z
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011468644
NSN
5962-01-146-8644
Q67000-L258-Z
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011468644
NSN
5962-01-146-8644
MFG
EPCOS AG
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
SN55142J
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011468644
NSN
5962-01-146-8644
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
616483-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468981
NSN
5962-01-146-8981
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616721-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468981
NSN
5962-01-146-8981
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M2716
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468981
NSN
5962-01-146-8981
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MK82716T-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468981
NSN
5962-01-146-8981
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468981
NSN
5962-01-146-8981
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468981
NSN
5962-01-146-8981
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616483-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468982
NSN
5962-01-146-8982
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616722-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468982
NSN
5962-01-146-8982
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468982
NSN
5962-01-146-8982
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468982
NSN
5962-01-146-8982
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616483-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468990
NSN
5962-01-146-8990
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616724-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468990
NSN
5962-01-146-8990
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468990
NSN
5962-01-146-8990
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468990
NSN
5962-01-146-8990
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616483-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468991
NSN
5962-01-146-8991
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616725-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011468991
NSN
5962-01-146-8991
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
