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5962-01-112-7394
20 Products
UPB8287D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127394
NSN
5962-01-112-7394
MFG
NEC AMERICA INC
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
F17006958
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127394
NSN
5962-01-112-7394
MFG
FSG INC
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
404458
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4350071-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
58082-90021-4
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
AAI CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
64-00003-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
GENERAL DYNAMICS OTS AEROSPACE INC. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
8111A-4
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
923395-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM9111ADM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM9111BDM883D
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM9111BDMB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D6000126
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
DEPARTMENT OF THE ARMY US ARMY AVIONICS RESEARCH AND DEVELOPMENT ACTIVITY
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DMS 88016B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM2111L
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011127395
NSN
5962-01-112-7395
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.920 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND W/DISABLE
III UNPACKAGED UNIT WEIGHT: 5.0 GRAMS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -62.0 TO 85.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97384-58082-90021 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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213Z113U01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127397
NSN
5962-01-112-7397
MFG
DELTA DATA SYSTEMS CORP
Description
BODY HEIGHT: 0.115 INCHES MAXIMUM
BODY LENGTH: 2.000 INCHES NOMINAL
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CENTRAL PROCESSOR UNIT
FEATURES PROVIDED: HERMETICALLY SEALED AND BIDIRECTIONAL AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.6 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5255-169
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127397
NSN
5962-01-112-7397
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.115 INCHES MAXIMUM
BODY LENGTH: 2.000 INCHES NOMINAL
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CENTRAL PROCESSOR UNIT
FEATURES PROVIDED: HERMETICALLY SEALED AND BIDIRECTIONAL AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.6 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM1883A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127397
NSN
5962-01-112-7397
MFG
WESTERN DIGITAL CORP
Description
BODY HEIGHT: 0.115 INCHES MAXIMUM
BODY LENGTH: 2.000 INCHES NOMINAL
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CENTRAL PROCESSOR UNIT
FEATURES PROVIDED: HERMETICALLY SEALED AND BIDIRECTIONAL AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.6 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM1883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127397
NSN
5962-01-112-7397
MFG
WESTERN DIGITAL CORP
Description
BODY HEIGHT: 0.115 INCHES MAXIMUM
BODY LENGTH: 2.000 INCHES NOMINAL
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CENTRAL PROCESSOR UNIT
FEATURES PROVIDED: HERMETICALLY SEALED AND BIDIRECTIONAL AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 0.6 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1DM2901ADM883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011127398
NSN
5962-01-112-7398
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.115 INCHES MAXIMUM
BODY LENGTH: 1.030 INCHES MINIMUM AND 1.090 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/44001BQB
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.6 WATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/440
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/440/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 42 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 110.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 110.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
