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5962-01-105-8345

20 Products

U74LS166

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

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U74LS166

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

MFG

DRS TACTICAL SYSTEMS LTD DBA LYNWOOD

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL/PARALLEL IN, SERIAL OUT
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DM74LS166N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

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DM74LS166N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL/PARALLEL IN, SERIAL OUT
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN74LS166AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

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SN74LS166AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL/PARALLEL IN, SERIAL OUT
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN74LS166N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

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SN74LS166N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL/PARALLEL IN, SERIAL OUT
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN74LS166N-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

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SN74LS166N-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058345

NSN

5962-01-105-8345

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL/PARALLEL IN, SERIAL OUT
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

IM55S23MJE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058346

NSN

5962-01-105-8346

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IM55S23MJE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058346

NSN

5962-01-105-8346

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

Q67000-H1062

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058347

NSN

5962-01-105-8347

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Q67000-H1062

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058347

NSN

5962-01-105-8347

MFG

EPCOS AG

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR BUFFER
FEATURES PROVIDED: POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN74LS28N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058347

NSN

5962-01-105-8347

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SN74LS28N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058347

NSN

5962-01-105-8347

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR BUFFER
FEATURES PROVIDED: POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN74LS28N-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058347

NSN

5962-01-105-8347

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SN74LS28N-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058347

NSN

5962-01-105-8347

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR BUFFER
FEATURES PROVIDED: POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

1820-1203

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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1820-1203

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

5200-657

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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5200-657

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

74H11N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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74H11N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

74LS11N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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74LS11N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SD36037

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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SD36037

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SL59908

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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SL59908

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN53510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

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SN53510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058348

NSN

5962-01-105-8348

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: POSITIVE OUTPUTS AND LOW POWER AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 19.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

1820-1444

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

View More Info

1820-1444

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

MFG

HEWLETT PACKARD CO

Description

BODY HEIGHT: 0.125 INCHES NOMINAL
BODY LENGTH: 0.890 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND W/ENABLE AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

74LS298PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

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74LS298PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.125 INCHES NOMINAL
BODY LENGTH: 0.890 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND W/ENABLE AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN57205

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

View More Info

SN57205

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.125 INCHES NOMINAL
BODY LENGTH: 0.890 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND W/ENABLE AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN74LS298N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

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SN74LS298N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058349

NSN

5962-01-105-8349

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.125 INCHES NOMINAL
BODY LENGTH: 0.890 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND W/ENABLE AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE