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5962-01-099-2999
20 Products
19-142F74M00R02
MICROCIRCUIT
NSN, MFG P/N
5962010992999
NSN
5962-01-099-2999
MFG
CONCURRENT COMPUTER CORPORATION
Description
MICROCIRCUIT
Related Searches:
S82S126F/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992858
NSN
5962-01-099-2858
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-206C
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
952644-210B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992859
NSN
5962-01-099-2859
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
HM1-7610-8
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992859
NSN
5962-01-099-2859
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
M5300-1D/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992859
NSN
5962-01-099-2859
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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NSN, MFG P/N
5962010992859
NSN
5962-01-099-2859
ROM/PROM FAMILY 021
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992859
NSN
5962-01-099-2859
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
S82S126F/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992859
NSN
5962-01-099-2859
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
952644
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992860
NSN
5962-01-099-2860
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-228B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
952644-228B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992860
NSN
5962-01-099-2860
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-228B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
HM1-7610-8
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992860
NSN
5962-01-099-2860
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-228B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
M5300-1D/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992860
NSN
5962-01-099-2860
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-228B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
S82S126F/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010992860
NSN
5962-01-099-2860
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-228B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
952644
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
952644-229B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
CC2656-229F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
HM1-7610-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
M5300-1D/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
ROM/PROM FAMILY 021
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
S82S126F/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010992861
NSN
5962-01-099-2861
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 952644-229B
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/OPEN COLLECTOR
III PRECIOUS MATERIAL: GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 3B150
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
Related Searches:
19-142F74M00
MICROCIRCUIT
NSN, MFG P/N
5962010992999
NSN
5962-01-099-2999
MFG
CONCURRENT COMPUTER CORPORATION
Description
MICROCIRCUIT
