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5962-01-096-2136
20 Products
RL26212
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962136
NSN
5962-01-096-2136
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND COMPLEMENTARY OUTPUTS AND FIXED AND PRESETTABLE AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-932170 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -40.0 VOLTS MINIMUM POWER SOURCE AND -25.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962130
NSN
5962-01-096-2130
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH GAIN AND ADJUSTABLE AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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7534580P1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962131
NSN
5962-01-096-2131
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER OR TIN
TEST DATA DOCUMENT: 99971-7534580 DRAWING
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962131
NSN
5962-01-096-2131
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER OR TIN
TEST DATA DOCUMENT: 99971-7534580 DRAWING
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962131
NSN
5962-01-096-2131
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER OR TIN
TEST DATA DOCUMENT: 99971-7534580 DRAWING
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LH2411
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962131
NSN
5962-01-096-2131
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER OR TIN
TEST DATA DOCUMENT: 99971-7534580 DRAWING
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67179-0001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962132
NSN
5962-01-096-2132
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 19397-ST67179 DRAWING
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962132
NSN
5962-01-096-2132
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 19397-ST67179 DRAWING
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RL32458
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962132
NSN
5962-01-096-2132
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 19397-ST67179 DRAWING
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ST67179-0001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962132
NSN
5962-01-096-2132
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 19397-ST67179 DRAWING
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1538-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962133
NSN
5962-01-096-2133
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962133
NSN
5962-01-096-2133
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962133
NSN
5962-01-096-2133
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962133
NSN
5962-01-096-2133
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962134
NSN
5962-01-096-2134
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962134
NSN
5962-01-096-2134
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962134
NSN
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MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962134
NSN
5962-01-096-2134
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
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932170-2B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962136
NSN
5962-01-096-2136
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND COMPLEMENTARY OUTPUTS AND FIXED AND PRESETTABLE AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-932170 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -40.0 VOLTS MINIMUM POWER SOURCE AND -25.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010962136
NSN
5962-01-096-2136
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND COMPLEMENTARY OUTPUTS AND FIXED AND PRESETTABLE AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 82577-932170 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -40.0 VOLTS MINIMUM POWER SOURCE AND -25.0 VOLTS MAXIMUM POWER SOURCE
