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5962-01-094-8892
20 Products
ROM/PROM FAMILY 034
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010948892
NSN
5962-01-094-8892
ROM/PROM FAMILY 034
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010948892
NSN
5962-01-094-8892
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: C141
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
AM1702A
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010948892
NSN
5962-01-094-8892
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: C141
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
MM1702AQ
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010948892
NSN
5962-01-094-8892
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: C141
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
911634-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010948893
NSN
5962-01-094-8893
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 911634-1
DESIGN FUNCTION AND QUANTITY: 4 LATCH, BISTABLE
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 80249
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
49A0369-020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010948974
NSN
5962-01-094-8974
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
Related Searches:
W4900369-020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010948974
NSN
5962-01-094-8974
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
Related Searches:
49A0195-000
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010948977
NSN
5962-01-094-8977
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/ENABLE AND W/STROBE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -60.0 TO 150.0 DEG CELSIUS
Related Searches:
W4900195-000
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010948977
NSN
5962-01-094-8977
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/ENABLE AND W/STROBE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -60.0 TO 150.0 DEG CELSIUS
Related Searches:
49A0195-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010948978
NSN
5962-01-094-8978
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/DISABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -60.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 21101-49A0195 DRAWING
Related Searches:
W4900195-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010948978
NSN
5962-01-094-8978
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/DISABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -60.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 21101-49A0195 DRAWING
Related Searches:
4204S
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010949065
NSN
5962-01-094-9065
MFG
BURR-BROWN CORP
Description
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 0.860 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER, ANALOG AND 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-936076 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -16.0 VOLTS MINIMUM POWER SOURCE AND 16.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4204SQ
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010949065
NSN
5962-01-094-9065
MFG
BURR-BROWN CORP
Description
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 0.860 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER, ANALOG AND 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-936076 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -16.0 VOLTS MINIMUM POWER SOURCE AND 16.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SM-A-936076-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010949065
NSN
5962-01-094-9065
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 0.860 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER, ANALOG AND 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-936076 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -16.0 VOLTS MINIMUM POWER SOURCE AND 16.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2104(S1234)
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010949069
NSN
5962-01-094-9069
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 21101-49A0295 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4096-16
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010949069
NSN
5962-01-094-9069
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 21101-49A0295 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4096-DC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010949069
NSN
5962-01-094-9069
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 21101-49A0295 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
49A0295-000
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010949069
NSN
5962-01-094-9069
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 21101-49A0295 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
W4900491-000
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010949069
NSN
5962-01-094-9069
MFG
UNISYS CORP FEDERAL SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 4096
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 21101-49A0295 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
911636-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010949488
NSN
5962-01-094-9488
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 911636-1
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 8 STAGE
MANUFACTURERS CODE: 80249
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
12280014
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010949595
NSN
5962-01-094-9595
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.355 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
