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5962-01-086-0296
20 Products
SNJ54LS11J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860296
NSN
5962-01-086-0296
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED AND MONOLITHIC AND W/RESISTOR
III OVERALL HEIGHT: 0.330 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
802419-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860296
NSN
5962-01-086-0296
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED AND MONOLITHIC AND W/RESISTOR
III OVERALL HEIGHT: 0.330 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SNJ54LS11J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860296
NSN
5962-01-086-0296
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED AND MONOLITHIC AND W/RESISTOR
III OVERALL HEIGHT: 0.330 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
7013070P054
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860297
NSN
5962-01-086-0297
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 4
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
Related Searches:
7013070P54
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860297
NSN
5962-01-086-0297
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 4
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
Related Searches:
14400702-01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860300
NSN
5962-01-086-0300
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 2048
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: PROGRAMMED USING DRAWING NO. 14401500-01
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
14400502-01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860301
NSN
5962-01-086-0301
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 2048
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: PROGRAMMED USING DRAWING NO. 14401400-01
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
16007758
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860303
NSN
5962-01-086-0303
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE AND W/DECODED OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1U10061-101A
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860303
NSN
5962-01-086-0303
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE AND W/DECODED OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2102AJ/R
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860303
NSN
5962-01-086-0303
MFG
ROCHESTER ELECTRONICS LLC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE AND W/DECODED OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MD8102A-4/B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860303
NSN
5962-01-086-0303
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE AND W/DECODED OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM2102AJ-4/883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010860303
NSN
5962-01-086-0303
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE AND W/DECODED OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1820-0661
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860305
NSN
5962-01-086-0305
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
7432
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860305
NSN
5962-01-086-0305
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SNJ5432J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860305
NSN
5962-01-086-0305
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SNJ55107J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860306
NSN
5962-01-086-0306
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
99106754
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860458
NSN
5962-01-086-0458
MFG
THALES
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND W/ENABLE AND EDGE TRIGGERED AND ASYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS669N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860458
NSN
5962-01-086-0458
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND W/ENABLE AND EDGE TRIGGERED AND ASYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNC54LS669J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860458
NSN
5962-01-086-0458
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND W/ENABLE AND EDGE TRIGGERED AND ASYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNC54LS669J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010860458
NSN
5962-01-086-0458
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL UP/DOWN
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND W/ENABLE AND EDGE TRIGGERED AND ASYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
