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5962-01-074-1671

20 Products

666A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741671

NSN

5962-01-074-1671

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666A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741671

NSN

5962-01-074-1671

MFG

DATA DEVICE CORPORATION

Description

BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 3.000 INCHES NOMINAL
BODY WIDTH: 2.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH VOLTAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 3.1 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C1199 DRAWING
TIME RATING PER CHACTERISTIC: 50000.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

HSR010

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741666

NSN

5962-01-074-1666

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HSR010

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741666

NSN

5962-01-074-1666

MFG

DATA DEVICE CORPORATION

Description

BODY HEIGHT: 0.810 INCHES MAXIMUM
BODY LENGTH: 2.160 INCHES MINIMUM AND 2.180 INCHES MAXIMUM
BODY WIDTH: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 26 PRINTED CIRCUIT

HSR040

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741667

NSN

5962-01-074-1667

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HSR040

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741667

NSN

5962-01-074-1667

MFG

DATA DEVICE CORPORATION

Description

BODY HEIGHT: 0.810 INCHES MAXIMUM
BODY LENGTH: 3.115 INCHES MINIMUM AND 3.135 INCHES MAXIMUM
BODY WIDTH: 2.615 INCHES MINIMUM AND 2.635 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT

932783-2B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

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932783-2B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

MFG

SARNOFF CORPORATION

Description

DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:

GEM09601BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

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GEM09601BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

MFG

SARNOFF CORPORATION

Description

DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:

MPD10069AW

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

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MPD10069AW

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:

SNJ54S140W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

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SNJ54S140W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010741668

NSN

5962-01-074-1668

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:

27030700190

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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27030700190

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

SAPA OPERACIONES S.L.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

3009352

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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3009352

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

7849527P001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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7849527P001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

808052-6

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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808052-6

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

BO3009352

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

View More Info

BO3009352

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LF157A4/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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LF157A4/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LF157AH/MIL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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LF157AH/MIL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LF157H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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LF157H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LF257H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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LF257H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

PHILIPS SEMICONDUCTORS UNTERNEHMENSBEREICH DER PHILIPS GMBH

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LF357AH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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LF357AH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

SC/90210

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

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SC/90210

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

CHEMRING ENERGETICS UK LIMITED

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

SC/A4/90210

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

View More Info

SC/A4/90210

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741670

NSN

5962-01-074-1670

MFG

CHEMRING ENERGETICS UK LIMITED

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

247AS-C1199

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741671

NSN

5962-01-074-1671

View More Info

247AS-C1199

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010741671

NSN

5962-01-074-1671

MFG

NAVAL AIR SYSTEMS COMMAND

Description

BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 3.000 INCHES NOMINAL
BODY WIDTH: 2.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH VOLTAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 3.1 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C1199 DRAWING
TIME RATING PER CHACTERISTIC: 50000.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT