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5962-01-074-1671
20 Products
666A
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741671
NSN
5962-01-074-1671
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 3.000 INCHES NOMINAL
BODY WIDTH: 2.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH VOLTAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 3.1 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C1199 DRAWING
TIME RATING PER CHACTERISTIC: 50000.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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HSR010
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741666
NSN
5962-01-074-1666
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.810 INCHES MAXIMUM
BODY LENGTH: 2.160 INCHES MINIMUM AND 2.180 INCHES MAXIMUM
BODY WIDTH: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 26 PRINTED CIRCUIT
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HSR040
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741667
NSN
5962-01-074-1667
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.810 INCHES MAXIMUM
BODY LENGTH: 3.115 INCHES MINIMUM AND 3.135 INCHES MAXIMUM
BODY WIDTH: 2.615 INCHES MINIMUM AND 2.635 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
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932783-2B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010741668
NSN
5962-01-074-1668
MFG
SARNOFF CORPORATION
Description
DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:
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GEM09601BDA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010741668
NSN
5962-01-074-1668
MFG
SARNOFF CORPORATION
Description
DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:
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MPD10069AW
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010741668
NSN
5962-01-074-1668
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:
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SNJ54S140W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010741668
NSN
5962-01-074-1668
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 932783-2B
MANUFACTURERS CODE: 0DKS7
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
THE MANUFACTURERS DATA:
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27030700190
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
SAPA OPERACIONES S.L.
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
3009352
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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7849527P001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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808052-6
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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BO3009352
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
LF157A4/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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LF157AH/MIL
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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LF157H
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
PHILIPS SEMICONDUCTORS UNTERNEHMENSBEREICH DER PHILIPS GMBH
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
LF357AH
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
SC/90210
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
CHEMRING ENERGETICS UK LIMITED
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
SC/A4/90210
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741670
NSN
5962-01-074-1670
MFG
CHEMRING ENERGETICS UK LIMITED
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
247AS-C1199
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741671
NSN
5962-01-074-1671
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 3.000 INCHES NOMINAL
BODY WIDTH: 2.000 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH VOLTAGE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 3.1 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C1199 DRAWING
TIME RATING PER CHACTERISTIC: 50000.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
