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5962-01-069-4530

20 Products

B2708

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694530

NSN

5962-01-069-4530

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B2708

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694530

NSN

5962-01-069-4530

MFG

INTEL CORP SALES OFFICE

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC

EA4264-2B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694522

NSN

5962-01-069-4522

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EA4264-2B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694522

NSN

5962-01-069-4522

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 5120
(NON-CORE DATA) WORD QUANTITY: 51
BODY HEIGHT: 0.060 INCHES NOMINAL
BODY LENGTH: 1.208 INCHES MINIMUM AND 1.232 INCHES MAXIMUM
BODY WIDTH: 0.595 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND RESETTABLE AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.3 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 33297-EA4264-2B DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS MAXIMUM POWER SOURCE

4008390-333

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010694523

NSN

5962-01-069-4523

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4008390-333

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010694523

NSN

5962-01-069-4523

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/GAIN SELECT AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 07187-4008390 DRAWING
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

HL22543

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010694523

NSN

5962-01-069-4523

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HL22543

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010694523

NSN

5962-01-069-4523

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/GAIN SELECT AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 07187-4008390 DRAWING
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

UA733HM

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010694523

NSN

5962-01-069-4523

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UA733HM

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010694523

NSN

5962-01-069-4523

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/GAIN SELECT AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 07187-4008390 DRAWING
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

571/146-0006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694525

NSN

5962-01-069-4525

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571/146-0006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694525

NSN

5962-01-069-4525

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 155.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 73030-5E8071/146 DRAWING
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5E8071-146-0006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694525

NSN

5962-01-069-4525

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5E8071-146-0006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694525

NSN

5962-01-069-4525

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 155.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 73030-5E8071/146 DRAWING
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694525

NSN

5962-01-069-4525

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694525

NSN

5962-01-069-4525

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.810 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 155.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 73030-5E8071/146 DRAWING
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5E8071-146-0007

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694526

NSN

5962-01-069-4526

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5E8071-146-0007

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694526

NSN

5962-01-069-4526

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MINIMUM AND 0.293 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MM5205

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694526

NSN

5962-01-069-4526

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MM5205

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694526

NSN

5962-01-069-4526

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MINIMUM AND 0.293 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694526

NSN

5962-01-069-4526

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694526

NSN

5962-01-069-4526

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MINIMUM AND 0.293 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

5E8071/146-0008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

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5E8071/146-0008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

MFG

HAMILTON SUNDSTRAND CORPORATION

760257-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

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760257-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

MFG

HAMILTON SUNDSTRAND CORPORATION

MM5205

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

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MM5205

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

MFG

MMI/AMD

ROM/PROM FAMILY 025

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

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ROM/PROM FAMILY 025

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010694527

NSN

5962-01-069-4527

MFG

DLA LAND AND MARITIME

11-594-830-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694528

NSN

5962-01-069-4528

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11-594-830-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694528

NSN

5962-01-069-4528

MFG

AHEARN AND SOPER CO INC

11-594-860-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694529

NSN

5962-01-069-4529

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11-594-860-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694529

NSN

5962-01-069-4529

MFG

HEWLETT PACKARD CO

1159-48-60-00/6

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694529

NSN

5962-01-069-4529

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1159-48-60-00/6

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694529

NSN

5962-01-069-4529

MFG

AHEARN AND SOPER CO INC

FCK111

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694529

NSN

5962-01-069-4529

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FCK111

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694529

NSN

5962-01-069-4529

MFG

AHEARN AND SOPER CO INC

2M1052A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694530

NSN

5962-01-069-4530

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2M1052A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010694530

NSN

5962-01-069-4530

MFG

COMPAQ FEDERAL LLC

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC