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5962-01-051-3013

20 Products

ROM/PROM FAMILY 032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513013

NSN

5962-01-051-3013

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ROM/PROM FAMILY 032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513013

NSN

5962-01-051-3013

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

351-0196-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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351-0196-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

35200006-1001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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35200006-1001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

GENICOM CORP

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

670128

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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670128

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

LOGIMETRICS INC

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

F52006160

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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F52006160

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

FSG INC

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

ULN-2003A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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ULN-2003A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

ULN2003A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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ULN2003A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

SPRAGUE ELECTRIC CO SOLID TANTALUM DIV

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

ULN2003AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

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ULN2003AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010512606

NSN

5962-01-051-2606

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

8555929

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010513006

NSN

5962-01-051-3006

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8555929

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010513006

NSN

5962-01-051-3006

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

BODY HEIGHT: 0.205 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY LENGTH: 1.350 INCHES NOMINAL
BODY WIDTH: 1.100 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND THICK FILM AND MONOLITHIC AND BURN IN
III OVERALL HEIGHT: 0.407 INCHES MINIMUM AND 0.507 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -32.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -56.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

SM-A-776909

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010513006

NSN

5962-01-051-3006

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SM-A-776909

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010513006

NSN

5962-01-051-3006

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.205 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY LENGTH: 1.350 INCHES NOMINAL
BODY WIDTH: 1.100 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND THICK FILM AND MONOLITHIC AND BURN IN
III OVERALL HEIGHT: 0.407 INCHES MINIMUM AND 0.507 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -32.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -56.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

57784-10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513010

NSN

5962-01-051-3010

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57784-10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513010

NSN

5962-01-051-3010

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, VOLTAGE CONTROLLED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT

8038CC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513010

NSN

5962-01-051-3010

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8038CC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513010

NSN

5962-01-051-3010

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, VOLTAGE CONTROLLED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT

58335

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513011

NSN

5962-01-051-3011

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58335

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513011

NSN

5962-01-051-3011

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

BODY HEIGHT: 0.260 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 99167
MFR SOURCE CONTROLLING REFERENCE: 58335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

CD4007AD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513011

NSN

5962-01-051-3011

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CD4007AD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513011

NSN

5962-01-051-3011

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.260 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 99167
MFR SOURCE CONTROLLING REFERENCE: 58335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

CD4007AD3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513011

NSN

5962-01-051-3011

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CD4007AD3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010513011

NSN

5962-01-051-3011

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.260 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 99167
MFR SOURCE CONTROLLING REFERENCE: 58335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

37654883-006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513012

NSN

5962-01-051-3012

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37654883-006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513012

NSN

5962-01-051-3012

MFG

RAYTHEON CO

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654883 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N82S115I

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513012

NSN

5962-01-051-3012

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N82S115I

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513012

NSN

5962-01-051-3012

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654883 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513012

NSN

5962-01-051-3012

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ROM/PROM FAMILY 032

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513012

NSN

5962-01-051-3012

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654883 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

37654883-013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513013

NSN

5962-01-051-3013

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37654883-013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513013

NSN

5962-01-051-3013

MFG

RAYTHEON CO

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N82S115I

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513013

NSN

5962-01-051-3013

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N82S115I

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010513013

NSN

5962-01-051-3013

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE