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5962-01-051-3013
20 Products
ROM/PROM FAMILY 032
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513013
NSN
5962-01-051-3013
ROM/PROM FAMILY 032
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513013
NSN
5962-01-051-3013
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
351-0196-010
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
35200006-1001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
GENICOM CORP
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
670128
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
LOGIMETRICS INC
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
F52006160
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
FSG INC
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
ULN-2003A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
ULN2003A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
SPRAGUE ELECTRIC CO SOLID TANTALUM DIV
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
ULN2003AN
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010512606
NSN
5962-01-051-2606
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HIGH VOLTAGE AND HIGH CURRENT AND MONOLITHIC AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
8555929
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010513006
NSN
5962-01-051-3006
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
BODY HEIGHT: 0.205 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY LENGTH: 1.350 INCHES NOMINAL
BODY WIDTH: 1.100 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND THICK FILM AND MONOLITHIC AND BURN IN
III OVERALL HEIGHT: 0.407 INCHES MINIMUM AND 0.507 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -32.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -56.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
SM-A-776909
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010513006
NSN
5962-01-051-3006
SM-A-776909
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010513006
NSN
5962-01-051-3006
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.205 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY LENGTH: 1.350 INCHES NOMINAL
BODY WIDTH: 1.100 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DIVIDER, POWER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND THICK FILM AND MONOLITHIC AND BURN IN
III OVERALL HEIGHT: 0.407 INCHES MINIMUM AND 0.507 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -32.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -56.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
57784-10
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010513010
NSN
5962-01-051-3010
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, VOLTAGE CONTROLLED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
Related Searches:
8038CC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010513010
NSN
5962-01-051-3010
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, VOLTAGE CONTROLLED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
Related Searches:
58335
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010513011
NSN
5962-01-051-3011
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
BODY HEIGHT: 0.260 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 99167
MFR SOURCE CONTROLLING REFERENCE: 58335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
CD4007AD
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010513011
NSN
5962-01-051-3011
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.260 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 99167
MFR SOURCE CONTROLLING REFERENCE: 58335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
CD4007AD3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010513011
NSN
5962-01-051-3011
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.260 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: E-3A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 99167
MFR SOURCE CONTROLLING REFERENCE: 58335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
37654883-006
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513012
NSN
5962-01-051-3012
MFG
RAYTHEON CO
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654883 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N82S115I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513012
NSN
5962-01-051-3012
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654883 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 032
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513012
NSN
5962-01-051-3012
ROM/PROM FAMILY 032
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513012
NSN
5962-01-051-3012
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654883 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
37654883-013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513013
NSN
5962-01-051-3013
MFG
RAYTHEON CO
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N82S115I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010513013
NSN
5962-01-051-3013
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.190 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/ENABLE AND W/STORAGE AND W/STROBE AND W/DISABLE AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 675.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
