My Quote Request
5962-01-050-6939
20 Products
TBP24S41N
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010506939
NSN
5962-01-050-6939
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
807802-055A05
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5962010506939
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5962-01-050-6939
MFG
RAYTHEON CO.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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5962010506939
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5962-01-050-6939
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ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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5962-01-050-6939
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962010506939
NSN
5962-01-050-6939
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962010506939
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5962-01-050-6939
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962010506939
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5962-01-050-6939
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962010506939
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5962-01-050-6939
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DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MFG
RAYTHEON CO.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.882 INCHES MINIMUM AND 0.926 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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5962-01-050-6942
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MFG
MCDONNELL DOUGLAS AEROSPACE SERVICES CO/MDASCO/ M/C S1064747
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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5962010506942
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5962-01-050-6942
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962010506942
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INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962010506942
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5962-01-050-6942
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
TBP24S41N
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010506942
NSN
5962-01-050-6942
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
63S441N
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010506945
NSN
5962-01-050-6945
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
807802-055A11
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010506945
NSN
5962-01-050-6945
MFG
MCDONNELL DOUGLAS AEROSPACE SERVICES CO/MDASCO/ M/C S1064747
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.915 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 532.48 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE