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5962-00-782-5067
20 Products
SE480J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825067
NSN
5962-00-782-5067
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER
III END ITEM IDENTIFICATION: INTERROGATOR SET TYPE AN/APX-76(V) AND AN/APX-76A(V)
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 28.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
330285-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825068
NSN
5962-00-782-5068
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.345 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND-NOR
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
Related Searches:
LC300012D1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825068
NSN
5962-00-782-5068
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.345 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND-NOR
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
Related Searches:
LC30002D1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825068
NSN
5962-00-782-5068
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.345 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND-NOR
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
Related Searches:
330298-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825069
NSN
5962-00-782-5069
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.035 INCHES NOMINAL
BODY LENGTH: 0.275 INCHES NOMINAL
BODY WIDTH: 0.185 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE, DIFFERENTIAL
INCLOSURE CONFIGURATION: FLAT PACK
Related Searches:
SC5400F1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825069
NSN
5962-00-782-5069
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.035 INCHES NOMINAL
BODY LENGTH: 0.275 INCHES NOMINAL
BODY WIDTH: 0.185 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE, DIFFERENTIAL
INCLOSURE CONFIGURATION: FLAT PACK
Related Searches:
U3H771031XA
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825069
NSN
5962-00-782-5069
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.035 INCHES NOMINAL
BODY LENGTH: 0.275 INCHES NOMINAL
BODY WIDTH: 0.185 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE, DIFFERENTIAL
INCLOSURE CONFIGURATION: FLAT PACK
Related Searches:
910436
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825070
NSN
5962-00-782-5070
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.381 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
Related Searches:
C8529J
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825070
NSN
5962-00-782-5070
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.381 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
Related Searches:
C8529W
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825070
NSN
5962-00-782-5070
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.381 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
Related Searches:
DMS 80015B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007825070
NSN
5962-00-782-5070
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.381 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
Related Searches:
910423-000T1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825447
NSN
5962-00-782-5447
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND BIPOLAR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD AND BODY GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN5400T-11
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825447
NSN
5962-00-782-5447
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND BIPOLAR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD AND BODY GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SNJ5400W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007825447
NSN
5962-00-782-5447
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND BIPOLAR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD AND BODY GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
910423-040T1
INTEGRATED CIRCUIT,
NSN, MFG P/N
5962007825459
NSN
5962-00-782-5459
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
INTEGRATED CIRCUIT,
Related Searches:
SN5440-11
INTEGRATED CIRCUIT,
NSN, MFG P/N
5962007825459
NSN
5962-00-782-5459
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTEGRATED CIRCUIT,
Related Searches:
195313-000
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007827254
NSN
5962-00-782-7254
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 81413-195313 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HL7207
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007827254
NSN
5962-00-782-7254
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 81413-195313 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC1712G
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007827254
NSN
5962-00-782-7254
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 81413-195313 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MIC712-1C
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007827254
NSN
5962-00-782-7254
MFG
ITT SEMICONDUCTORS DIV
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 81413-195313 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
