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5962-00-539-1078

20 Products

SN5406J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005391078

NSN

5962-00-539-1078

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SN5406J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005391078

NSN

5962-00-539-1078

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 DRIVER AND 2 INVERTER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 3 INPUT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226832-001
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:

4006720-311

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

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4006720-311

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 99971-7528162 SPECIFICATION

711BE012

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

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711BE012

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

MFG

TELCOM SEMICONDUCTOR INC

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 99971-7528162 SPECIFICATION

7528162P2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

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7528162P2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 99971-7528162 SPECIFICATION

B77T0139-0133

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

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B77T0139-0133

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 99971-7528162 SPECIFICATION

HL7248

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

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HL7248

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 99971-7528162 SPECIFICATION

NC4308

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

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NC4308

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005392966

NSN

5962-00-539-2966

MFG

ITT SEMICONDUCTORS DIV

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 99971-7528162 SPECIFICATION

104416

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

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104416

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

MFG

SIERRA NETWORKS INC SIERRACOM DIV

Description

(NON-CORE DATA) BIT QUANTITY: 6
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 104416
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, CODE BINARY TO BINARY CODED DECIMAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 99380
MAXIMUM POWER DISSIPATION RATING: 520.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 99380-104416 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

54185DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

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54185DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 6
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 104416
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, CODE BINARY TO BINARY CODED DECIMAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 99380
MAXIMUM POWER DISSIPATION RATING: 520.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 99380-104416 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

98340 28950

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

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98340 28950

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

(NON-CORE DATA) BIT QUANTITY: 6
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 104416
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, CODE BINARY TO BINARY CODED DECIMAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 99380
MAXIMUM POWER DISSIPATION RATING: 520.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 99380-104416 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN54185J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

View More Info

SN54185J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005392977

NSN

5962-00-539-2977

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 6
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 104416
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, CODE BINARY TO BINARY CODED DECIMAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 99380
MAXIMUM POWER DISSIPATION RATING: 520.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 99380-104416 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

310119P5

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

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310119P5

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

CB132E

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

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CB132E

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

HL40261

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

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HL40261

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

HL40262

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

View More Info

HL40262

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

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ROM/PROM FAMILY 003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SCM565L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

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SCM565L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SL40185

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

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SL40185

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393228

NSN

5962-00-539-3228

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

310119P6

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393237

NSN

5962-00-539-3237

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310119P6

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393237

NSN

5962-00-539-3237

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

CB133E

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393237

NSN

5962-00-539-3237

View More Info

CB133E

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962005393237

NSN

5962-00-539-3237

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310119 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE