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5962-00-204-2674

20 Products

MIS-18698/079-01Z

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002042674

NSN

5962-00-204-2674

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MIS-18698/079-01Z

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002042674

NSN

5962-00-204-2674

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.350 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN CONTROL REFERENCE: MIS-18698/079-01Z
MANUFACTURERS CODE: 18876
THE MANUFACTURERS DATA:

MM1702AQ

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002032086

NSN

5962-00-203-2086

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MM1702AQ

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002032086

NSN

5962-00-203-2086

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.210 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE AND 0.5 VOLTS MAXIMUM POWER SOURCE

8008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032091

NSN

5962-00-203-2091

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8008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032091

NSN

5962-00-203-2091

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 128000
(NON-CORE DATA) WORD QUANTITY: 16000
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.890 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CENTRAL PROCESSOR UNIT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE AND W/ENABLE AND SYNCHRONOUS AND FAST CARRY AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE AND 0.5 VOLTS MAXIMUM POWER SOURCE

351-7085-022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

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351-7085-022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 WIDE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 25.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7085 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

G101K2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

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G101K2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 WIDE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 25.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7085 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

RG101C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

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RG101C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 WIDE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 25.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7085 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SC3433FH22A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

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SC3433FH22A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032092

NSN

5962-00-203-2092

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 WIDE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 25.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7085 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

310085P2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032717

NSN

5962-00-203-2717

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310085P2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032717

NSN

5962-00-203-2717

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.409 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 310085P2
DESIGN FUNCTION AND QUANTITY: 2 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 94117
MAXIMUM POWER DISSIPATION RATING: 150.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310085 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

HL11057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032717

NSN

5962-00-203-2717

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HL11057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002032717

NSN

5962-00-203-2717

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.409 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 310085P2
DESIGN FUNCTION AND QUANTITY: 2 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 94117
MAXIMUM POWER DISSIPATION RATING: 150.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310085 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

351-7267-022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

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351-7267-022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 351-7267-022B
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7267 DRAWING
THE MANUFACTURERS DATA:

G241K3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

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G241K3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 351-7267-022B
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7267 DRAWING
THE MANUFACTURERS DATA:

RG241K3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

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RG241K3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 351-7267-022B
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7267 DRAWING
THE MANUFACTURERS DATA:

SC2527FH22B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

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SC2527FH22B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 351-7267-022B
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7267 DRAWING
THE MANUFACTURERS DATA:

SG24121

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

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SG24121

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035503

NSN

5962-00-203-5503

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 351-7267-022B
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7267 DRAWING
THE MANUFACTURERS DATA:

93L00FM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035545

NSN

5962-00-203-5545

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93L00FM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035545

NSN

5962-00-203-5545

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND MEDIUM SPEED AND ASYNCHRONOUS AND POSITIVE OUTPUTS AND RESETTABLE AND SYNCHRONOUS AND W/ENABLE AND COMPLEMENTARY OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 75.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

93L10FM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035551

NSN

5962-00-203-5551

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93L10FM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035551

NSN

5962-00-203-5551

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL TO DECADE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND SYNCHRONOUS AND PRESETTABLE AND W/ENABLE AND ASYNCHRONOUS AND RESETTABLE AND POSITIVE OUTPUTS AND LOW POWER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 85.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

DMS 83012B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035551

NSN

5962-00-203-5551

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DMS 83012B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035551

NSN

5962-00-203-5551

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY CODED DECIMAL TO DECADE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND SYNCHRONOUS AND PRESETTABLE AND W/ENABLE AND ASYNCHRONOUS AND RESETTABLE AND POSITIVE OUTPUTS AND LOW POWER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 85.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

93L11FMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035554

NSN

5962-00-203-5554

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93L11FMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035554

NSN

5962-00-203-5554

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 19
BODY HEIGHT: 0.065 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.620 INCHES MAXIMUM
BODY WIDTH: 0.365 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF SIXTEEN LINE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND W/ENABLE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 58.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

DMS 83012B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035554

NSN

5962-00-203-5554

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DMS 83012B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002035554

NSN

5962-00-203-5554

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 19
BODY HEIGHT: 0.065 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.620 INCHES MAXIMUM
BODY WIDTH: 0.365 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, ONE OF SIXTEEN LINE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND W/ENABLE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 58.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

MIS-18698/027-01Z

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002042635

NSN

5962-00-204-2635

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MIS-18698/027-01Z

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002042635

NSN

5962-00-204-2635

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

BODY HEIGHT: 0.070 INCHES NOMINAL
BODY LENGTH: 0.240 INCHES NOMINAL
BODY WIDTH: 0.240 INCHES NOMINAL
DESIGN CONTROL REFERENCE: MIS-18698/027-01Z
MANUFACTURERS CODE: 18876
THE MANUFACTURERS DATA: