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5962-00-137-8935

20 Products

TG63J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

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TG63J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 98230-0N169511 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SNJ54154W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377476

NSN

5962-00-137-7476

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SNJ54154W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377476

NSN

5962-00-137-7476

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-019-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, FOUR TO SIXTEEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND W/DECODED OUTPUT AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 92220-M511-033 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE

U4M931151X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377476

NSN

5962-00-137-7476

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U4M931151X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377476

NSN

5962-00-137-7476

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-019-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, FOUR TO SIXTEEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND W/DECODED OUTPUT AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 92220-M511-033 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE

M511-034-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377477

NSN

5962-00-137-7477

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M511-034-0001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377477

NSN

5962-00-137-7477

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: M511-034-0001
DESIGN FUNCTION AND QUANTITY: 4 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND COMPLEMENTARY OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 07421
MAXIMUM POWER DISSIPATION RATING: 280.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 92220-M511-034 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SC65599FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377477

NSN

5962-00-137-7477

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SC65599FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377477

NSN

5962-00-137-7477

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: M511-034-0001
DESIGN FUNCTION AND QUANTITY: 4 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND COMPLEMENTARY OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 07421
MAXIMUM POWER DISSIPATION RATING: 280.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 92220-M511-034 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN14448

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377477

NSN

5962-00-137-7477

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SN14448

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001377477

NSN

5962-00-137-7477

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: M511-034-0001
DESIGN FUNCTION AND QUANTITY: 4 LATCH, D
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND COMPLEMENTARY OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 07421
MAXIMUM POWER DISSIPATION RATING: 280.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 92220-M511-034 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

51-83395E02

INTEGRATED CIRCUIT

NSN, MFG P/N

5962001377815

NSN

5962-00-137-7815

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51-83395E02

INTEGRATED CIRCUIT

NSN, MFG P/N

5962001377815

NSN

5962-00-137-7815

MFG

FREESCALE SEMICONDUCTOR INC.

51-83977M06

INTEGRATED CIRCUIT

NSN, MFG P/N

5962001377815

NSN

5962-00-137-7815

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51-83977M06

INTEGRATED CIRCUIT

NSN, MFG P/N

5962001377815

NSN

5962-00-137-7815

MFG

VENTELO

161-123-2003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378284

NSN

5962-00-137-8284

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161-123-2003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378284

NSN

5962-00-137-8284

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND-NOR
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 161-123-2003
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: BENT LEADS
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

RX3821

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378284

NSN

5962-00-137-8284

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RX3821

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378284

NSN

5962-00-137-8284

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND-NOR
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 161-123-2003
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: BENT LEADS
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

SG221-34

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378284

NSN

5962-00-137-8284

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SG221-34

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378284

NSN

5962-00-137-8284

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND-NOR
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 161-123-2003
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: BENT LEADS
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

4854-01-3

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001378403

NSN

5962-00-137-8403

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4854-01-3

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001378403

NSN

5962-00-137-8403

MFG

L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY LENGTH: 1.000 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: INTERCONNECTING BOX J-3176/ULR-17(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 4.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

258603

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378405

NSN

5962-00-137-8405

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258603

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378405

NSN

5962-00-137-8405

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.213 INCHES NOMINAL
BODY LENGTH: 2.050 INCHES NOMINAL
BODY WIDTH: 1.148 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14
MANUFACTURERS CODE: 4U884
MFR SOURCE CONTROLLING REFERENCE: 258603
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SOURCE CONTROL DRAWING; WEAPON SYSTEM ESSENTIAL

3900634

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378405

NSN

5962-00-137-8405

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3900634

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378405

NSN

5962-00-137-8405

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.213 INCHES NOMINAL
BODY LENGTH: 2.050 INCHES NOMINAL
BODY WIDTH: 1.148 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AIRCRAFT, TOMCAT F-14
MANUFACTURERS CODE: 4U884
MFR SOURCE CONTROLLING REFERENCE: 258603
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SOURCE CONTROL DRAWING; WEAPON SYSTEM ESSENTIAL

339300

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378928

NSN

5962-00-137-8928

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339300

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378928

NSN

5962-00-137-8928

MFG

TELEMECHANICS INC

Description

BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MC8300P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378928

NSN

5962-00-137-8928

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MC8300P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378928

NSN

5962-00-137-8928

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, UNIVERSAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND RESETTABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

0N169511-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

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0N169511-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 98230-0N169511 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

3N169511-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

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3N169511-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 98230-0N169511 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

RG63D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

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RG63D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 98230-0N169511 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SG63-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

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SG63-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001378935

NSN

5962-00-137-8935

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 98230-0N169511 DRAWING
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE