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5962-00-001-1911

20 Products

ROM/PROM FAMILY 058

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011911

NSN

5962-00-001-1911

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ROM/PROM FAMILY 058

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011911

NSN

5962-00-001-1911

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.045 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
INCLOSURE MATERIAL: SILICON

ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011906

NSN

5962-00-001-1906

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ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011906

NSN

5962-00-001-1906

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619126 DRAWING
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

619126-30

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011907

NSN

5962-00-001-1907

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619126-30

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011907

NSN

5962-00-001-1907

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619126 DRAWING
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011907

NSN

5962-00-001-1907

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ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011907

NSN

5962-00-001-1907

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619126 DRAWING
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

619126-31

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011908

NSN

5962-00-001-1908

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619126-31

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011908

NSN

5962-00-001-1908

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.045 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
INCLOSURE MATERIAL: SILICON

ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011908

NSN

5962-00-001-1908

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ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011908

NSN

5962-00-001-1908

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.045 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
INCLOSURE MATERIAL: SILICON

619126-32

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011909

NSN

5962-00-001-1909

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619126-32

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011909

NSN

5962-00-001-1909

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.045 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
INCLOSURE MATERIAL: SILICON

ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011909

NSN

5962-00-001-1909

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ROM/PROM FAMILY 057

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011909

NSN

5962-00-001-1909

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.045 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
INCLOSURE MATERIAL: SILICON

619128-11

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011910

NSN

5962-00-001-1910

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619128-11

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011910

NSN

5962-00-001-1910

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.040 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND MEDIUM POWER AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
MEMORY DEVICE TYPE: DIODE MATRIX
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: CURRENT-MODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619128 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 60.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 058

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011910

NSN

5962-00-001-1910

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ROM/PROM FAMILY 058

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011910

NSN

5962-00-001-1910

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.040 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND MEDIUM POWER AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
MEMORY DEVICE TYPE: DIODE MATRIX
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: CURRENT-MODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619128 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 60.0 VOLTS MAXIMUM POWER SOURCE

619128-12

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011911

NSN

5962-00-001-1911

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619128-12

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000011911

NSN

5962-00-001-1911

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.045 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
INCLOSURE MATERIAL: SILICON

619128-14

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011912

NSN

5962-00-001-1912

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619128-14

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011912

NSN

5962-00-001-1912

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.045 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM POWER
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
MEMORY DEVICE TYPE: DIODE MATRIX
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: CURRENT-MODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619128 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 60.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 058

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011912

NSN

5962-00-001-1912

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ROM/PROM FAMILY 058

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962000011912

NSN

5962-00-001-1912

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.045 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM POWER
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
MEMORY DEVICE TYPE: DIODE MATRIX
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: CURRENT-MODE LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619128 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 60.0 VOLTS MAXIMUM POWER SOURCE

T3346

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012574

NSN

5962-00-001-2574

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T3346

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012574

NSN

5962-00-001-2574

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

Description

SPECIAL FEATURES: DRIVER SINGLE AND DIODE PULSE MODULATOR

V00565-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012574

NSN

5962-00-001-2574

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V00565-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012574

NSN

5962-00-001-2574

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

SPECIAL FEATURES: DRIVER SINGLE AND DIODE PULSE MODULATOR

PS73312-8

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012592

NSN

5962-00-001-2592

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PS73312-8

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012592

NSN

5962-00-001-2592

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PS73312-8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL 4-INPUT POSITIVE NAND BUFFER
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM INPUT

SN35368

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012592

NSN

5962-00-001-2592

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SN35368

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012592

NSN

5962-00-001-2592

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PS73312-8
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL 4-INPUT POSITIVE NAND BUFFER
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM INPUT

1970182-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012961

NSN

5962-00-001-2961

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1970182-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012961

NSN

5962-00-001-2961

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 1970182-1
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 55974
MAXIMUM POWER DISSIPATION RATING: 480.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 19315-1970182 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

9024DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012961

NSN

5962-00-001-2961

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9024DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012961

NSN

5962-00-001-2961

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 1970182-1
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND HIGH SPEED AND W/CLEAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 55974
MAXIMUM POWER DISSIPATION RATING: 480.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 19315-1970182 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

971101-221

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012968

NSN

5962-00-001-2968

View More Info

971101-221

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962000012968

NSN

5962-00-001-2968

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT