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5961-01-566-2749
20 Products
106-5007-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662749
NSN
5961-01-566-2749
106-5007-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662749
NSN
5961-01-566-2749
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSEMBLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
JANTXV1N4574A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015652326
NSN
5961-01-565-2326
JANTXV1N4574A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015652326
NSN
5961-01-565-2326
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4574A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL LENGTH: 2.120 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 475.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/452 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MAXIMUM REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
906-50037-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015652568
NSN
5961-01-565-2568
906-50037-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015652568
NSN
5961-01-565-2568
MFG
THE BOEING COMPANY DBA BOEING
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MURD320T4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015652568
NSN
5961-01-565-2568
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11440371
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015652834
NSN
5961-01-565-2834
11440371
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015652834
NSN
5961-01-565-2834
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
201498-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015653053
NSN
5961-01-565-3053
201498-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015653053
NSN
5961-01-565-3053
MFG
SUPERIOR ELECTRIC HOLDING GROUP LLC DBA SUPERIOR ELECTRIC DIV DANAHER SENSORS & CONTROLS
Description
III END ITEM IDENTIFICATION: REGULAR, VOLTAGE
SPECIAL FEATURES: DESCRIPTION: RECTIFIER ASSEMBLY, 30A, 200V
Related Searches:
JANTXV1N6475
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015653657
NSN
5961-01-565-3657
JANTXV1N6475
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015653657
NSN
5961-01-565-3657
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6475
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: EUROFIGHTER 2000,EFA
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/552
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.395 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.7 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
PD55F120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015653939
NSN
5961-01-565-3939
PD55F120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015653939
NSN
5961-01-565-3939
MFG
SANREX CORP
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: BRACKET
SPECIAL FEATURES: DESIGNED FOR VARIOUS RECTIFICER CIRCUITS AND POWER CONTROLS
Related Searches:
2N6678
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015654550
NSN
5961-01-565-4550
MFG
MICROSEMI MICROWAVE PRODUCTS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER SILICON TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE
Related Searches:
M15454-13
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015656961
NSN
5961-01-565-6961
M15454-13
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015656961
NSN
5961-01-565-6961
MFG
LINCOLN ELECTRIC HOLDINGS INC.
Description
III END ITEM IDENTIFICATION: WELDING MACHINE POWER WAVE 455
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE, BRIDGE
SPECIAL FEATURES: 160A, 1600V, F-W, 3PH
Related Searches:
1N6065A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015657191
NSN
5961-01-565-7191
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES NOMINAL PEAK PULSE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N6065A
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.333 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 NOMINAL BREAKDOWN VOLTAGE, DC AND 100.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
BSS84
TRANSISTOR
NSN, MFG P/N
5961015657716
NSN
5961-01-565-7716
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 0.36 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: P-CHANNEL MODE FIELD EFFECT; HIGH DENSITY CELL; HIGHT SATURATION CURRENT
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
MA47220-144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015658045
NSN
5961-01-565-8045
MA47220-144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015658045
NSN
5961-01-565-8045
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SVT300-5
TRANSISTOR
NSN, MFG P/N
5961015659281
NSN
5961-01-565-9281
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CRITICALITY CODE JUSTIFICATION: AGAV
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 25F AIRCRAFT, AWACS, E-3A; EZN TICONDEROGA CLASS CG(47); JDN ARLEIGH BURKE CLASS DDG; SZN 2M/ATE MICROMINIATURE TEST EQUIPMENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 21908-167-0043-001 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 325.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
3581041
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015659515
NSN
5961-01-565-9515
MFG
OSHKOSH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1047533
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015661165
NSN
5961-01-566-1165
MFG
SCHOTTEL INC.
Description
III END ITEM IDENTIFICATION: DRIVE UNIT, MARINE PROPULSION SRP170
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
SPECIAL FEATURES: DIODE 1N4007
Related Searches:
951184
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015661503
NSN
5961-01-566-1503
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
III END ITEM IDENTIFICATION: WELDER, DIGIPULSE 450I 31120
III PART NAME ASSIGNED BY CONTROLLING AGENCY: OUTPUT DIODE
Related Searches:
106-0053-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662746
NSN
5961-01-566-2746
106-0053-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662746
NSN
5961-01-566-2746
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSEMBLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
106-0054-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662747
NSN
5961-01-566-2747
106-0054-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662747
NSN
5961-01-566-2747
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSEMBLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
106-5002-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662748
NSN
5961-01-566-2748
106-5002-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015662748
NSN
5961-01-566-2748
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSEMBLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
