My Quote Request
No products added yet
5961-01-525-8684
20 Products
FS0002132
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015258684
NSN
5961-01-525-8684
FS0002132
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015258684
NSN
5961-01-525-8684
MFG
MN/SSF MARINE NATIONALE / SERVICE DE SOUTIEN DE LA FLOTTE
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT SINGLE SEMICONDUCTOR
III END ITEM IDENTIFICATION: POWER UNIT, 0.8 KW, DC, 841-01.
OVERALL LENGTH: 94.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 34.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 SCREW AND 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER SINGLE SEMICONDUCTOR DEVICE DIODE
Related Searches:
1400156-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015258806
NSN
5961-01-525-8806
1400156-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015258806
NSN
5961-01-525-8806
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A15A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015258806
NSN
5961-01-525-8806
MFG
GENERAL ELECTRIC CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
841-03-DWG REF DES Q3
TRANSISTOR
NSN, MFG P/N
5961015258945
NSN
5961-01-525-8945
MFG
PIVOTAL POWER INC
Description
III END ITEM IDENTIFICATION: POWER UNIT, 0.8 KW, DC, 841-01.
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: SLOT AND SLOT AND THREADED HOLE
OVERALL LENGTH: 33.9 MILLIMETERS MINIMUM AND 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.3 MILLIMETERS MINIMUM AND 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: SHORT CIRCUIT RATED ULTRAFAST: OPTIMIZED FOR HIGH OPERATING FREQUENCIES >5.0 KHZ, AND SHORT CIRCUIT RATED TO 10 US @ 125 DEG. CELSIUS, VGE= 15 V. INDUSTRY STANDARD T0-247AC PACKAGE. GENERATION 4 INSULATED GATE BIPOLAR TRANSISTOR.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 18.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN
Related Searches:
IRG4PC40K
TRANSISTOR
NSN, MFG P/N
5961015258945
NSN
5961-01-525-8945
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: POWER UNIT, 0.8 KW, DC, 841-01.
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: SLOT AND SLOT AND THREADED HOLE
OVERALL LENGTH: 33.9 MILLIMETERS MINIMUM AND 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.3 MILLIMETERS MINIMUM AND 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: SHORT CIRCUIT RATED ULTRAFAST: OPTIMIZED FOR HIGH OPERATING FREQUENCIES >5.0 KHZ, AND SHORT CIRCUIT RATED TO 10 US @ 125 DEG. CELSIUS, VGE= 15 V. INDUSTRY STANDARD T0-247AC PACKAGE. GENERATION 4 INSULATED GATE BIPOLAR TRANSISTOR.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 18.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN
Related Searches:
843-03-DWG REF DES Q3
TRANSISTOR
NSN, MFG P/N
5961015258976
NSN
5961-01-525-8976
MFG
PIVOTAL POWER INC
Description
III END ITEM IDENTIFICATION: POWER UNIT, 2.4 KW, DC, 831-01.
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: SLOT AND SLOT AND UNTHREADED HOLE
OVERALL LENGTH: 33.9 MILLIMETERS MINIMUM AND 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.3 MILLIMETERS MINIMUM AND 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: SHORT CIRCUIT RATED - 10US @ 125 DEGREES CELSIUS, VGE=15V. OPTIMIZED FOR HIGH OPERATING FREQUENCY OVER 5 KHZ.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER
Related Searches:
IRGPC40K
TRANSISTOR
NSN, MFG P/N
5961015258976
NSN
5961-01-525-8976
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: POWER UNIT, 2.4 KW, DC, 831-01.
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: SLOT AND SLOT AND UNTHREADED HOLE
OVERALL LENGTH: 33.9 MILLIMETERS MINIMUM AND 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.3 MILLIMETERS MINIMUM AND 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: SHORT CIRCUIT RATED - 10US @ 125 DEGREES CELSIUS, VGE=15V. OPTIMIZED FOR HIGH OPERATING FREQUENCY OVER 5 KHZ.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER
Related Searches:
749544PC203
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015259456
NSN
5961-01-525-9456
749544PC203
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015259456
NSN
5961-01-525-9456
MFG
SPD ELECTRICAL SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 900.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 575.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 17000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
III END ITEM IDENTIFICATION: SWITCHBOARD, DC POWER DISTRIBUTION, 3H-5H UNIT 3. SWITCHBOARD, DC POWER DISTRIBUTION, 3H-5H UNIT 1. SWITCHBOARD, DC POWER DISTRIBUTION, 4H-6H UNIT 1.
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 52.1 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: ELECTRICALLY ISOLATED HEATSINKING, ALUMINUM NITRIDE INSULATOR, COMPRESSION BONDED ELEMENTS, QUICK CONNECT GATE TERMINAL WITH PROVISION FOR KEYED PLUG.
TERMINAL TYPE AND QUANTITY: 2 THREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
LS431650
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015259456
NSN
5961-01-525-9456
LS431650
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015259456
NSN
5961-01-525-9456
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 900.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 575.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 17000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
III END ITEM IDENTIFICATION: SWITCHBOARD, DC POWER DISTRIBUTION, 3H-5H UNIT 3. SWITCHBOARD, DC POWER DISTRIBUTION, 3H-5H UNIT 1. SWITCHBOARD, DC POWER DISTRIBUTION, 4H-6H UNIT 1.
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 52.1 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: ELECTRICALLY ISOLATED HEATSINKING, ALUMINUM NITRIDE INSULATOR, COMPRESSION BONDED ELEMENTS, QUICK CONNECT GATE TERMINAL WITH PROVISION FOR KEYED PLUG.
TERMINAL TYPE AND QUANTITY: 2 THREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
101-229
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262399
NSN
5961-01-526-2399
101-229
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262399
NSN
5961-01-526-2399
MFG
PERKINS ENGINES INC
Description
III END ITEM IDENTIFICATION: ELECTRICAL GROUP, ALTERNATOR , LIFTKING FORKLIFT.
MAJOR COMPONENTS: RECTIFIER RING 1, DIODES 3.
SPECIAL FEATURES: INCLUDES DIODE BUTTON, MOUNTING BOLTS, AND RECTIFIER RING. 12 VOLT, 65 AMP REGULATORS, 50 AMP DIODES.
Related Searches:
101-243
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262399
NSN
5961-01-526-2399
101-243
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262399
NSN
5961-01-526-2399
MFG
PRESTOLITE ELECTRIC INC
Description
III END ITEM IDENTIFICATION: ELECTRICAL GROUP, ALTERNATOR , LIFTKING FORKLIFT.
MAJOR COMPONENTS: RECTIFIER RING 1, DIODES 3.
SPECIAL FEATURES: INCLUDES DIODE BUTTON, MOUNTING BOLTS, AND RECTIFIER RING. 12 VOLT, 65 AMP REGULATORS, 50 AMP DIODES.
Related Searches:
101-228
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262430
NSN
5961-01-526-2430
101-228
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262430
NSN
5961-01-526-2430
MFG
PRESTOLITE ELECTRIC INC
Description
III END ITEM IDENTIFICATION: ELECTRICAL GROUP, ALTERNATOR, LIFTKING FORKLIFT.
MAJOR COMPONENTS: DIODES 3, DIODE HOUSING 1.
SPECIAL FEATURES: INCLUDES DIODE ASSEMBLY, TRIO CABLE, MOUNTING BOLTS, HOUSING TAP, 12 VOLT 65 AMP REGULATORS.
Related Searches:
101-227
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262520
NSN
5961-01-526-2520
101-227
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015262520
NSN
5961-01-526-2520
MFG
PRESTOLITE ELECTRIC INC
Description
III END ITEM IDENTIFICATION: ELECTRICAL GROUP, ALTERNATOR, LIFTKING FORKLIFT.
MAJOR COMPONENTS: DIODE HOUSING 1, DIODES 3.
SPECIAL FEATURES: INCLUDES DIODE ASSEMBLY, TRIO CABLE, MOUNTING BOLTS, HOUSING TAP, 12 VOLT, 65 AMP REGULATORS.
Related Searches:
2SK1796
TRANSISTOR
NSN, MFG P/N
5961015262625
NSN
5961-01-526-2625
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: RADIO, REMOTE CONTROL
OVERALL LENGTH: 39.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 15.7 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 19.0 MILLIMETERS MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
UZZ9115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015264756
NSN
5961-01-526-4756
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: JET FUEL STARTERSYSTEM
SPECIAL FEATURES: SUBASSEMBLY IS EMERGENCY POWER UNIT CONTROLLER; REFERENCE TECHNICAL MANUAL T.O. 8D11-3-48-4 FIG. 7.2 ITEM 70
Related Searches:
GBPC5010
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015264762
NSN
5961-01-526-4762
GBPC5010
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015264762
NSN
5961-01-526-4762
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 WORKING PEAK REVERSE VOLTAGE AND 700.0 REVERSE VOLTAGE, TOTAL RMS AND 1.1 FORWARD VOLTAGE, PEAK
III END ITEM IDENTIFICATION: SIMULATOR,RADAR SIGNAL
MATERIAL: GLASS
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.432 INCHES MINIMUM AND 0.442 INCHES MAXIMUM
OVERALL LENGTH: 1.118 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
OVERALL WIDTH: 1.118 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
4P8061-202-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015265782
NSN
5961-01-526-5782
4P8061-202-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015265782
NSN
5961-01-526-5782
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSY NIIN 01-526-5783;F/A-18E/F
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR DEVICE,AIRCRAFT MATERIAL
Related Searches:
JANTX1N3020BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015265980
NSN
5961-01-526-5980
JANTX1N3020BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015265980
NSN
5961-01-526-5980
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL MAXIMUM REVERSE SURGE CURRENT AND 95.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3020BUR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.094 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.189 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.014 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX2N3700UB
TRANSISTOR
NSN, MFG P/N
5961015265981
NSN
5961-01-526-5981
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3700UB
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL LENGTH: 0.128 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.022 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
JANTX1N5535BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015265983
NSN
5961-01-526-5983
JANTX1N5535BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015265983
NSN
5961-01-526-5983
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT AND 25.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5535BUR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
