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5961-01-487-5765
20 Products
A3177363-3
TRANSISTOR
NSN, MFG P/N
5961014875765
NSN
5961-01-487-5765
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A ORANGE COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 96.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 107.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
55-4214
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014866486
NSN
5961-01-486-6486
55-4214
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014866486
NSN
5961-01-486-6486
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
SPECIAL FEATURES: READY FOR TRANSFER; J6R; 08-11-2009.
Related Searches:
1808210
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014866490
NSN
5961-01-486-6490
1808210
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014866490
NSN
5961-01-486-6490
MFG
PHENIX TECHNOLOGIES INC.
Description
III END ITEM IDENTIFICATION: MOTOR TEST SET
Related Searches:
1N4245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014866907
NSN
5961-01-486-6907
MFG
MICROSEMI CORPORATION
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.031 INCHES NOMINAL
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
5613081
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014866929
NSN
5961-01-486-6929
MFG
NAVAL SEA SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: FC 29 QA PROJ
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.086 INCHES
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNC
Related Searches:
02-1131-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014867125
NSN
5961-01-486-7125
02-1131-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014867125
NSN
5961-01-486-7125
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
III END ITEM IDENTIFICATION: F-15 AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
402937
TRANSISTOR
NSN, MFG P/N
5961014868950
NSN
5961-01-486-8950
MFG
TARGET CORPORATION DBA TARGET
Description
III END ITEM IDENTIFICATION: USED ON TURKISH COASTAL SURVEILLANCE RADAR
Related Searches:
404751
TRANSISTOR
NSN, MFG P/N
5961014868951
NSN
5961-01-486-8951
MFG
TARGET CORPORATION DBA TARGET
Description
III END ITEM IDENTIFICATION: USED ON TURKISH COASTAL SURVEILLANCE RADAR
Related Searches:
940-31670
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014870382
NSN
5961-01-487-0382
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-31670
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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940-31677-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014870383
NSN
5961-01-487-0383
940-31677-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014870383
NSN
5961-01-487-0383
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-31677-2
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
JANTX2N7218
TRANSISTOR
NSN, MFG P/N
5961014870660
NSN
5961-01-487-0660
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7218
SPEC/STD CONTROLLING DATA:
Related Searches:
182-114
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014870755
NSN
5961-01-487-0755
182-114
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014870755
NSN
5961-01-487-0755
MFG
MILLER ELECTRIC MFG CO
Description
III END ITEM IDENTIFICATION: WELDING MACHINE
Related Searches:
JANTX1N6491
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014873125
NSN
5961-01-487-3125
JANTX1N6491
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014873125
NSN
5961-01-487-3125
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6491
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
C0334
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014874196
NSN
5961-01-487-4196
MFG
MITSUBISHI ELECTRIC AUTOMATION INC. DIV UPS GROUP FEDERAL GOVERNMENT
Description
III END ITEM IDENTIFICATION: MITSUBISHI UNINTERRUPTIBLE POWER SUPPLY (MUPS)
SPECIAL FEATURES: THYRISTOR-TM400DZ-2H 1600V;400A
Related Searches:
A1Z1029034
TRANSISTOR
NSN, MFG P/N
5961014874973
NSN
5961-01-487-4973
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -0.12 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
FDV302P
TRANSISTOR
NSN, MFG P/N
5961014874973
NSN
5961-01-487-4973
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -0.12 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
JANTX1N5719
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014875114
NSN
5961-01-487-5114
JANTX1N5719
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014875114
NSN
5961-01-487-5114
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5719
SPEC/STD CONTROLLING DATA:
Related Searches:
2N5031
TRANSISTOR
NSN, MFG P/N
5961014875722
NSN
5961-01-487-5722
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A RED COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 86.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 95.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
A3177363-2
TRANSISTOR
NSN, MFG P/N
5961014875722
NSN
5961-01-487-5722
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A RED COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 86.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 95.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N5031
TRANSISTOR
NSN, MFG P/N
5961014875765
NSN
5961-01-487-5765
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A ORANGE COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 96.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 107.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
