Featured Products

My Quote Request

No products added yet

5961-01-487-5765

20 Products

A3177363-3

TRANSISTOR

NSN, MFG P/N

5961014875765

NSN

5961-01-487-5765

View More Info

A3177363-3

TRANSISTOR

NSN, MFG P/N

5961014875765

NSN

5961-01-487-5765

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A ORANGE COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 96.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 107.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

55-4214

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014866486

NSN

5961-01-486-6486

View More Info

55-4214

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014866486

NSN

5961-01-486-6486

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

1808210

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014866490

NSN

5961-01-486-6490

View More Info

1808210

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014866490

NSN

5961-01-486-6490

MFG

PHENIX TECHNOLOGIES INC.

1N4245

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014866907

NSN

5961-01-486-6907

View More Info

1N4245

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014866907

NSN

5961-01-486-6907

MFG

MICROSEMI CORPORATION

Description

INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.031 INCHES NOMINAL
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

5613081

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014866929

NSN

5961-01-486-6929

View More Info

5613081

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014866929

NSN

5961-01-486-6929

MFG

NAVAL SEA SYSTEMS COMMAND

Description

III END ITEM IDENTIFICATION: FC 29 QA PROJ
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.086 INCHES
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNC

02-1131-02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014867125

NSN

5961-01-486-7125

View More Info

02-1131-02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014867125

NSN

5961-01-486-7125

MFG

LUCAS AEROSPACE POWER EQUIPMENT CORPORATION

Description

III END ITEM IDENTIFICATION: F-15 AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

402937

TRANSISTOR

NSN, MFG P/N

5961014868950

NSN

5961-01-486-8950

View More Info

402937

TRANSISTOR

NSN, MFG P/N

5961014868950

NSN

5961-01-486-8950

MFG

TARGET CORPORATION DBA TARGET

Description

III END ITEM IDENTIFICATION: USED ON TURKISH COASTAL SURVEILLANCE RADAR

404751

TRANSISTOR

NSN, MFG P/N

5961014868951

NSN

5961-01-486-8951

View More Info

404751

TRANSISTOR

NSN, MFG P/N

5961014868951

NSN

5961-01-486-8951

MFG

TARGET CORPORATION DBA TARGET

Description

III END ITEM IDENTIFICATION: USED ON TURKISH COASTAL SURVEILLANCE RADAR

940-31670

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014870382

NSN

5961-01-487-0382

View More Info

940-31670

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014870382

NSN

5961-01-487-0382

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-31670
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

940-31677-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014870383

NSN

5961-01-487-0383

View More Info

940-31677-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014870383

NSN

5961-01-487-0383

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-31677-2
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

JANTX2N7218

TRANSISTOR

NSN, MFG P/N

5961014870660

NSN

5961-01-487-0660

View More Info

JANTX2N7218

TRANSISTOR

NSN, MFG P/N

5961014870660

NSN

5961-01-487-0660

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7218
SPEC/STD CONTROLLING DATA:

182-114

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014870755

NSN

5961-01-487-0755

View More Info

182-114

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014870755

NSN

5961-01-487-0755

MFG

MILLER ELECTRIC MFG CO

JANTX1N6491

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014873125

NSN

5961-01-487-3125

View More Info

JANTX1N6491

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014873125

NSN

5961-01-487-3125

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6491
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS

C0334

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014874196

NSN

5961-01-487-4196

View More Info

C0334

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014874196

NSN

5961-01-487-4196

MFG

MITSUBISHI ELECTRIC AUTOMATION INC. DIV UPS GROUP FEDERAL GOVERNMENT

Description

III END ITEM IDENTIFICATION: MITSUBISHI UNINTERRUPTIBLE POWER SUPPLY (MUPS)
SPECIAL FEATURES: THYRISTOR-TM400DZ-2H 1600V;400A

A1Z1029034

TRANSISTOR

NSN, MFG P/N

5961014874973

NSN

5961-01-487-4973

View More Info

A1Z1029034

TRANSISTOR

NSN, MFG P/N

5961014874973

NSN

5961-01-487-4973

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -0.12 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE

FDV302P

TRANSISTOR

NSN, MFG P/N

5961014874973

NSN

5961-01-487-4973

View More Info

FDV302P

TRANSISTOR

NSN, MFG P/N

5961014874973

NSN

5961-01-487-4973

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -0.12 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE

JANTX1N5719

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014875114

NSN

5961-01-487-5114

View More Info

JANTX1N5719

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014875114

NSN

5961-01-487-5114

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5719
SPEC/STD CONTROLLING DATA:

2N5031

TRANSISTOR

NSN, MFG P/N

5961014875722

NSN

5961-01-487-5722

View More Info

2N5031

TRANSISTOR

NSN, MFG P/N

5961014875722

NSN

5961-01-487-5722

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A RED COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 86.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 95.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

A3177363-2

TRANSISTOR

NSN, MFG P/N

5961014875722

NSN

5961-01-487-5722

View More Info

A3177363-2

TRANSISTOR

NSN, MFG P/N

5961014875722

NSN

5961-01-487-5722

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A RED COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 86.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 95.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N5031

TRANSISTOR

NSN, MFG P/N

5961014875765

NSN

5961-01-487-5765

View More Info

2N5031

TRANSISTOR

NSN, MFG P/N

5961014875765

NSN

5961-01-487-5765

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MARKING. A ORANGE COLORED DOT SHALL BE PLACED ON THE DEVICE USING EPOXY-BASED INK AFTER SCREENING.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 96.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 107.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN