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5961-01-454-7273
20 Products
BYD37D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014547273
NSN
5961-01-454-7273
MFG
PHILIPS SEMICONDUCTORS INC
Description
OVERALL DIAMETER: 2.05 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
381521-1
TRANSISTOR
NSN, MFG P/N
5961014547275
NSN
5961-01-454-7275
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.181 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -0.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 1.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
LP0701LG
TRANSISTOR
NSN, MFG P/N
5961014547275
NSN
5961-01-454-7275
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.181 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -0.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 1.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
381482-1
TRANSISTOR
NSN, MFG P/N
5961014547298
NSN
5961-01-454-7298
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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SMP5114
TRANSISTOR
NSN, MFG P/N
5961014547298
NSN
5961-01-454-7298
MFG
INTERFET CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
SST5114
TRANSISTOR
NSN, MFG P/N
5961014547298
NSN
5961-01-454-7298
MFG
CALOGIC LLC
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
381920-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014547304
NSN
5961-01-454-7304
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 144.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 165.5 MAXIMUM BREAKDOWN VOLTAGE, DC
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SMBJ150CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014547304
NSN
5961-01-454-7304
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 144.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 165.5 MAXIMUM BREAKDOWN VOLTAGE, DC
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515969-01
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014547971
NSN
5961-01-454-7971
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
GBPC1502
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014547975
NSN
5961-01-454-7975
GBPC1502
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014547975
NSN
5961-01-454-7975
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
G394047-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014548411
NSN
5961-01-454-8411
G394047-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014548411
NSN
5961-01-454-8411
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
5082-2765
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549572
NSN
5961-01-454-9572
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
A3188159-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549572
NSN
5961-01-454-9572
A3188159-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549572
NSN
5961-01-454-9572
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
A3192420-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549574
NSN
5961-01-454-9574
A3192420-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549574
NSN
5961-01-454-9574
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
DVH3821-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549574
NSN
5961-01-454-9574
DVH3821-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549574
NSN
5961-01-454-9574
MFG
SKYWORKS SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
MA46605-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549574
NSN
5961-01-454-9574
MA46605-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549574
NSN
5961-01-454-9574
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
936A916
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549829
NSN
5961-01-454-9829
MFG
SUNDSTRAND CORP
Description
III END ITEM IDENTIFICATION: VARIOUS E/I FSCM 99999
Related Searches:
936A919
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549829
NSN
5961-01-454-9829
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: VARIOUS E/I FSCM 99999
Related Searches:
NH936A919
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549829
NSN
5961-01-454-9829
MFG
DLA LAND AND MARITIME
Description
III END ITEM IDENTIFICATION: VARIOUS E/I FSCM 99999
Related Searches:
OM11684SCX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549829
NSN
5961-01-454-9829
OM11684SCX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014549829
NSN
5961-01-454-9829
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
III END ITEM IDENTIFICATION: VARIOUS E/I FSCM 99999
