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5961-01-454-7273

20 Products

BYD37D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014547273

NSN

5961-01-454-7273

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BYD37D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014547273

NSN

5961-01-454-7273

MFG

PHILIPS SEMICONDUCTORS INC

Description

OVERALL DIAMETER: 2.05 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

381521-1

TRANSISTOR

NSN, MFG P/N

5961014547275

NSN

5961-01-454-7275

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381521-1

TRANSISTOR

NSN, MFG P/N

5961014547275

NSN

5961-01-454-7275

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.181 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -0.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 1.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

LP0701LG

TRANSISTOR

NSN, MFG P/N

5961014547275

NSN

5961-01-454-7275

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LP0701LG

TRANSISTOR

NSN, MFG P/N

5961014547275

NSN

5961-01-454-7275

MFG

SUPERTEX INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.181 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -0.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 1.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

381482-1

TRANSISTOR

NSN, MFG P/N

5961014547298

NSN

5961-01-454-7298

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381482-1

TRANSISTOR

NSN, MFG P/N

5961014547298

NSN

5961-01-454-7298

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

SMP5114

TRANSISTOR

NSN, MFG P/N

5961014547298

NSN

5961-01-454-7298

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SMP5114

TRANSISTOR

NSN, MFG P/N

5961014547298

NSN

5961-01-454-7298

MFG

INTERFET CORPORATION

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

SST5114

TRANSISTOR

NSN, MFG P/N

5961014547298

NSN

5961-01-454-7298

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SST5114

TRANSISTOR

NSN, MFG P/N

5961014547298

NSN

5961-01-454-7298

MFG

CALOGIC LLC

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

381920-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014547304

NSN

5961-01-454-7304

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381920-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014547304

NSN

5961-01-454-7304

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 144.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 165.5 MAXIMUM BREAKDOWN VOLTAGE, DC

SMBJ150CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014547304

NSN

5961-01-454-7304

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SMBJ150CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014547304

NSN

5961-01-454-7304

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 144.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 165.5 MAXIMUM BREAKDOWN VOLTAGE, DC

515969-01

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014547971

NSN

5961-01-454-7971

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515969-01

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014547971

NSN

5961-01-454-7971

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

GBPC1502

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014547975

NSN

5961-01-454-7975

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GBPC1502

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014547975

NSN

5961-01-454-7975

MFG

GENERAL SEMICONDUCTOR INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE

G394047-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014548411

NSN

5961-01-454-8411

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G394047-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014548411

NSN

5961-01-454-8411

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

5082-2765

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549572

NSN

5961-01-454-9572

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5082-2765

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549572

NSN

5961-01-454-9572

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

A3188159-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549572

NSN

5961-01-454-9572

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A3188159-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549572

NSN

5961-01-454-9572

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

A3192420-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549574

NSN

5961-01-454-9574

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A3192420-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549574

NSN

5961-01-454-9574

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

DVH3821-04

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549574

NSN

5961-01-454-9574

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DVH3821-04

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549574

NSN

5961-01-454-9574

MFG

SKYWORKS SOLUTIONS INC.

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

MA46605-120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549574

NSN

5961-01-454-9574

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MA46605-120

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549574

NSN

5961-01-454-9574

MFG

ADVANCED SEMICONDUCTOR INC. DBA A S I

Description

III END ITEM IDENTIFICATION: NSN 5895-01-381-1056 E/I CAGE 80058
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

936A916

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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936A916

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

SUNDSTRAND CORP

936A919

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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936A919

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

HAMILTON SUNDSTRAND CORPORATION

NH936A919

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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NH936A919

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

DLA LAND AND MARITIME

OM11684SCX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

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OM11684SCX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014549829

NSN

5961-01-454-9829

MFG

INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL