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5961-01-433-3657
20 Products
12067-0006
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014333657
NSN
5961-01-433-3657
12067-0006
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014333657
NSN
5961-01-433-3657
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
12077-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014333660
NSN
5961-01-433-3660
12077-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014333660
NSN
5961-01-433-3660
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
7700S-0134P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014333811
NSN
5961-01-433-3811
7700S-0134P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014333811
NSN
5961-01-433-3811
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
81384-01
TRANSISTOR
NSN, MFG P/N
5961014333829
NSN
5961-01-433-3829
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
TRANSISTOR
Related Searches:
94-5395
TRANSISTOR
NSN, MFG P/N
5961014333829
NSN
5961-01-433-3829
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
2001073-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014333845
NSN
5961-01-433-3845
2001073-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014333845
NSN
5961-01-433-3845
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL AND PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
TEST DATA DOCUMENT: 66948-2001073 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UFB7.5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014333845
NSN
5961-01-433-3845
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL AND PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
TEST DATA DOCUMENT: 66948-2001073 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
953349-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014335406
NSN
5961-01-433-5406
MFG
RAYTHEON COMPANY DIV AMDS
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 7.000 POUNDS
OVERALL HEIGHT: 13.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 20.0 MILLIMETERS NOMINAL
Related Searches:
5041261
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014335712
NSN
5961-01-433-5712
5041261
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014335712
NSN
5961-01-433-5712
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: 6625-01-238-6918
MAJOR COMPONENTS: OUTPUT MULTIPLIER 1, INPUT MULTIPLIER 1
SPECIAL TEST FEATURES: MULTIPLIER STEP RECOVERY DIODE CARRIER ASSEMBLY
Related Searches:
501075 REV B ITEM 4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014335747
NSN
5961-01-433-5747
501075 REV B ITEM 4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014335747
NSN
5961-01-433-5747
MFG
MARINE ELECTRIC SYSTEMS INC . DBA MESYS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
MB12A35V80
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014335747
NSN
5961-01-433-5747
MB12A35V80
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014335747
NSN
5961-01-433-5747
MFG
POWEREX INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
91618904
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014336644
NSN
5961-01-433-6644
MFG
THALES
Description
OVERALL LENGTH: 31.32 MILLIMETERS NOMINAL
SPECIAL FEATURES: STUD CATHODE AND STUD ANODE VERSIONS;DESIGNED FOR BATTERY CHARGERS, CONVERTORS,POWER SUPPLIES,MACHINE TOOL CONTROLS;STORAGE TEMPERATURE MINUS 65.000 TO PLUS 200.000 DEGREES CENTIGRADE
Related Searches:
A12FR80
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014336644
NSN
5961-01-433-6644
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
OVERALL LENGTH: 31.32 MILLIMETERS NOMINAL
SPECIAL FEATURES: STUD CATHODE AND STUD ANODE VERSIONS;DESIGNED FOR BATTERY CHARGERS, CONVERTORS,POWER SUPPLIES,MACHINE TOOL CONTROLS;STORAGE TEMPERATURE MINUS 65.000 TO PLUS 200.000 DEGREES CENTIGRADE
Related Searches:
12125-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014336656
NSN
5961-01-433-6656
12125-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014336656
NSN
5961-01-433-6656
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
12124-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014336659
NSN
5961-01-433-6659
12124-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014336659
NSN
5961-01-433-6659
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
12105-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014336661
NSN
5961-01-433-6661
12105-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014336661
NSN
5961-01-433-6661
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
11-30571-0001
TRANSISTOR
NSN, MFG P/N
5961014337459
NSN
5961-01-433-7459
MFG
SL POWER ELECTRONICS CORPORATION
Description
III END ITEM IDENTIFICATION: TGRI 50011 TYPE 93 RADAR
Related Searches:
91751301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014338841
NSN
5961-01-433-8841
MFG
THALES
Description
CAPACITANCE RATING IN PICOFARADS: 1.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
SMP1603-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014338841
NSN
5961-01-433-8841
SMP1603-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014338841
NSN
5961-01-433-8841
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 1.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
IXFM24N50
TRANSISTOR
NSN, MFG P/N
5961014340273
NSN
5961-01-434-0273
MFG
IXYS CORPORATION
Description
TRANSISTOR
