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5961-01-407-5856
20 Products
391-0353-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075856
NSN
5961-01-407-5856
391-0353-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075856
NSN
5961-01-407-5856
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV1N6164A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070039
NSN
5961-01-407-0039
JANTXV1N6164A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070039
NSN
5961-01-407-0039
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 13.30 AMPERES MAXIMUM PEAK PULSE CURRENT AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6164A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION SILVER
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, INSTANTANEOUS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 77.9 MINIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
D235A140-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070040
NSN
5961-01-407-0040
D235A140-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070040
NSN
5961-01-407-0040
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 MILLIAMPERES MAXIMUM GATE 2 CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5711UR-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/444 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N5711UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070040
NSN
5961-01-407-0040
JANTX1N5711UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070040
NSN
5961-01-407-0040
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 MILLIAMPERES MAXIMUM GATE 2 CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5711UR-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/444 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTXV1N6148A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070041
NSN
5961-01-407-0041
JANTXV1N6148A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070041
NSN
5961-01-407-0041
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 59.80 AMPERES MAXIMUM PEAK PULSE CURRENT AND 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6148A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION SILVER
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, INSTANTANEOUS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.10 MINIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
901850
TRANSISTOR
NSN, MFG P/N
5961014070530
NSN
5961-01-407-0530
MFG
SOLID STATE TESTING INC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
901850-1
TRANSISTOR
NSN, MFG P/N
5961014070530
NSN
5961-01-407-0530
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA LAND & SELF PROTECTION SYSTEM DIVISION DIV LAND & SELF PROTECTION SYSTEMS DIV
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
20A2647-3911
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070535
NSN
5961-01-407-0535
20A2647-3911
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070535
NSN
5961-01-407-0535
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA LAND & SELF PROTECTION SYSTEM DIVISION DIV LAND & SELF PROTECTION SYSTEMS DIV
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DCR-1004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070535
NSN
5961-01-407-0535
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SCL126H1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014070535
NSN
5961-01-407-0535
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
421138
TRANSISTOR
NSN, MFG P/N
5961014072146
NSN
5961-01-407-2146
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
TRANSISTOR
Related Searches:
1901-0492
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014073368
NSN
5961-01-407-3368
1901-0492
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014073368
NSN
5961-01-407-3368
MFG
HEWLETT PACKARD CO
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
MR1038B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014073368
NSN
5961-01-407-3368
MR1038B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014073368
NSN
5961-01-407-3368
MFG
FREESCALE SEMICONDUCTOR INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
C5072427
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014073722
NSN
5961-01-407-3722
MFG
US ARMY ELECTRONIC WARFARE LABORATORY SEE CAGE CODE 80063
Description
FUNCTION FOR WHICH DESIGNED: DETECTOR AND PHOTODIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: INDIUM ARSENIDE
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 57957-C5072427 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.0 NOMINAL SOURCE SUPPLY VOLTAGE
Related Searches:
J12-18C-R01M-PE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014073722
NSN
5961-01-407-3722
J12-18C-R01M-PE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014073722
NSN
5961-01-407-3722
MFG
EG&G INC. OPTOELECTRONICS DIVISION DIV JUDSON TECHNOLOGIES
Description
FUNCTION FOR WHICH DESIGNED: DETECTOR AND PHOTODIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: INDIUM ARSENIDE
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 57957-C5072427 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.0 NOMINAL SOURCE SUPPLY VOLTAGE
Related Searches:
1N5102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014074083
NSN
5961-01-407-4083
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5102
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
1N5103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014074085
NSN
5961-01-407-4085
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5103
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 190.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
1N5101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014074086
NSN
5961-01-407-4086
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5101
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
6FR120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014074138
NSN
5961-01-407-4138
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3192063
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014074184
NSN
5961-01-407-4184
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
