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5961-01-388-8240

20 Products

969C877-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013888240

NSN

5961-01-388-8240

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969C877-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013888240

NSN

5961-01-388-8240

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

III END ITEM IDENTIFICATION: PACER DAWN
MAJOR COMPONENTS: DIODE 4

IRKN91/06

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013884292

NSN

5961-01-388-4292

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IRKN91/06

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013884292

NSN

5961-01-388-4292

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

77C953324P18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013884585

NSN

5961-01-388-4585

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77C953324P18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013884585

NSN

5961-01-388-4585

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

EY2437140101

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013885447

NSN

5961-01-388-5447

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EY2437140101

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013885447

NSN

5961-01-388-5447

MFG

ESE INC. DBA E S COMPONENTS COMPANY

922-6518-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013885516

NSN

5961-01-388-5516

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922-6518-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013885516

NSN

5961-01-388-5516

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 THREADED STUD
TEST DATA DOCUMENT: 95105-992-6518 SPECIFICATION
THREAD QUANTITY PER INCH: 40
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

UM7104D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013885516

NSN

5961-01-388-5516

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UM7104D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013885516

NSN

5961-01-388-5516

MFG

MICRO USPD INC

Description

CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND TERMINAL
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 THREADED STUD
TEST DATA DOCUMENT: 95105-992-6518 SPECIFICATION
THREAD QUANTITY PER INCH: 40
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

10218

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013885651

NSN

5961-01-388-5651

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10218

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013885651

NSN

5961-01-388-5651

MFG

STEREO OPTICAL COMPANY INC. DIV STEREO OPTICAL COMPANY INC.

Description

DESIGN CONTROL REFERENCE: 10218
III END ITEM IDENTIFICATION: 6540-01-375-9031
MANUFACTURERS CODE: 02012
SPECIAL FEATURES: FOR USE ON STEROSCOPE,VISUAL TESTING; MDL.
THE MANUFACTURERS DATA:

LL-H36-9493

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013885651

NSN

5961-01-388-5651

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LL-H36-9493

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013885651

NSN

5961-01-388-5651

MFG

NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT

Description

DESIGN CONTROL REFERENCE: 10218
III END ITEM IDENTIFICATION: 6540-01-375-9031
MANUFACTURERS CODE: 02012
SPECIAL FEATURES: FOR USE ON STEROSCOPE,VISUAL TESTING; MDL.
THE MANUFACTURERS DATA:

5529257

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013885712

NSN

5961-01-388-5712

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5529257

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013885712

NSN

5961-01-388-5712

MFG

NAVAL SEA SYSTEMS COMMAND

12043-0081

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013886072

NSN

5961-01-388-6072

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12043-0081

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013886072

NSN

5961-01-388-6072

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N958B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013886072

NSN

5961-01-388-6072

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1N958B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013886072

NSN

5961-01-388-6072

MFG

FREESCALE SEMICONDUCTOR INC.

Description

INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

302657-001

TRANSISTOR

NSN, MFG P/N

5961013886901

NSN

5961-01-388-6901

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302657-001

TRANSISTOR

NSN, MFG P/N

5961013886901

NSN

5961-01-388-6901

MFG

BALL AEROSPACE & TECHNOLOGIES CORP. DIV ANTENNA AND VIDEO TECHNOLOGIES

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.500 MILLIAMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC

2N2857-211

TRANSISTOR

NSN, MFG P/N

5961013886934

NSN

5961-01-388-6934

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2N2857-211

TRANSISTOR

NSN, MFG P/N

5961013886934

NSN

5961-01-388-6934

MFG

BALL AEROSPACE & TECHNOLOGIES CORP. DIV ANTENNA AND VIDEO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

9038D21-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013887068

NSN

5961-01-388-7068

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9038D21-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013887068

NSN

5961-01-388-7068

MFG

SUNDSTRAND CORP ELECTRIC POWER SYSTEMS DIV

Description

III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: SCR ASSY; SCR, MOUNTING BASE, 2 EA INSULATED WIRE LEAD W/LUG, DIODE, HEAT SHRINK INSULATION

903BD21-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013887068

NSN

5961-01-388-7068

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903BD21-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013887068

NSN

5961-01-388-7068

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: SCR ASSY; SCR, MOUNTING BASE, 2 EA INSULATED WIRE LEAD W/LUG, DIODE, HEAT SHRINK INSULATION

1.5KE300CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013887510

NSN

5961-01-388-7510

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1.5KE300CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013887510

NSN

5961-01-388-7510

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.188 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 2.285 INCHES MINIMUM AND 2.375 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 270.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 330.0 MAXIMUM BREAKDOWN VOLTAGE, DC

1301F005PC29

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013887510

NSN

5961-01-388-7510

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1301F005PC29

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013887510

NSN

5961-01-388-7510

MFG

PEERLESS INSTRUMENT CO. INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.188 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 2.285 INCHES MINIMUM AND 2.375 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 270.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 330.0 MAXIMUM BREAKDOWN VOLTAGE, DC

969C878-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013888097

NSN

5961-01-388-8097

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969C878-1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013888097

NSN

5961-01-388-8097

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

III END ITEM IDENTIFICATION: PACER DAWN
MAJOR COMPONENTS: DIODE 4

TR169-21

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013888172

NSN

5961-01-388-8172

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TR169-21

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013888172

NSN

5961-01-388-8172

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

1855-0277

TRANSISTOR

NSN, MFG P/N

5961013888233

NSN

5961-01-388-8233

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1855-0277

TRANSISTOR

NSN, MFG P/N

5961013888233

NSN

5961-01-388-8233

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER