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5961-01-348-7989
20 Products
28385-711
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
28385-711
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.32 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.18 MILLIMETERS MINIMUM AND 4.18 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
28385-711A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
28385-711A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.32 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.18 MILLIMETERS MINIMUM AND 4.18 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
BRX46
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
MFG
BRITISH SAROZAL LTD
Description
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.32 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.18 MILLIMETERS MINIMUM AND 4.18 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
BRY55-100
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
BRY55-100
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013487989
NSN
5961-01-348-7989
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.32 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.18 MILLIMETERS MINIMUM AND 4.18 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
312A1644-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
312A1644-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
MFG
BAE SYSTEMS CONTROLS INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES PEAK FORWARD SURGE CURRENT AND 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
95-4981
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
95-4981
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES PEAK FORWARD SURGE CURRENT AND 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
NH312A1644-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
NH312A1644-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
MFG
DLA LAND AND MARITIME
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES PEAK FORWARD SURGE CURRENT AND 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
USD-3056
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
USD-3056
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013488665
NSN
5961-01-348-8665
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES PEAK FORWARD SURGE CURRENT AND 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
70HFL100S10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489497
NSN
5961-01-348-9497
70HFL100S10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489497
NSN
5961-01-348-9497
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, DC
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES NOMINAL
SPECIAL FEATURES: TRR TEST CONDITIONS 1000.0 NS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
91524233
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489497
NSN
5961-01-348-9497
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, DC
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES NOMINAL
SPECIAL FEATURES: TRR TEST CONDITIONS 1000.0 NS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
BYW92-50U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489840
NSN
5961-01-348-9840
MFG
PHILIPS SEMICONDUCTORS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1989658
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489841
NSN
5961-01-348-9841
MFG
REMY INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
103551L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489842
NSN
5961-01-348-9842
MFG
VALEO EQUIPEMENTS ELECTRIQUES MOTEUR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
49054400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013489842
NSN
5961-01-348-9842
MFG
HATZ DIESEL OF AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
723-055-004
TRANSISTOR
NSN, MFG P/N
5961013490222
NSN
5961-01-349-0222
MFG
ANDREW SCICOMM INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND OSCILLATOR
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 15.18 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 6.7 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
MGF-1412-11-08
TRANSISTOR
NSN, MFG P/N
5961013490222
NSN
5961-01-349-0222
MFG
MITSUBISHI ELECTRONICS AMERICA INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND OSCILLATOR
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 15.18 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 6.7 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
NE88935
TRANSISTOR
NSN, MFG P/N
5961013490223
NSN
5961-01-349-0223
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 10.55 MILLIMETERS NOMINAL
OVERALL WIDTH: 10.55 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 4.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MA42001-511
TRANSISTOR
NSN, MFG P/N
5961013490224
NSN
5961-01-349-0224
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.190 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 2.5 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MTM12N10
TRANSISTOR
NSN, MFG P/N
5961013490225
NSN
5961-01-349-0225
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-204AA
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
915811
TRANSISTOR
NSN, MFG P/N
5961013490226
NSN
5961-01-349-0226
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 12.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-BASE
VOLTAGE RAT
